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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 内容类型：会议论文    学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Niu ZC; Wang XD; Miao ZH; Feng SL 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 crystal morphology  quantum dots  molecular beam epitaxy  semiconducting gallium arsenide  semiconducting indium gallium arsenide  1.35 MU-M  GAAS-SURFACES  PHOTOLUMINESCENCE  ISLANDS   Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 作者:  Jiang DS 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 molecular beam epitaxy  quantum wells  semiconducting IIIV materials  LUMINESCENCE  GAASN   Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures 会议论文 international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000 作者:  Han PD 收藏  |  浏览/下载：16/0  |  提交时间：2010/10/29 AlGaN/GaN heterostructures  In-doping  2DEG  electron sheet density  X-ray diffraction  etching  CHEMICAL-VAPOR-DEPOSITION  MOLECULAR-BEAM EPITAXY  PHASE EPITAXY  MOBILITY  GROWTH  FILMS   Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures 会议论文 26th international symposium on compound semiconducors, berlin, germany, aug 22-26, 1999 Wang H; Wang HL; Feng SL; Zhu HJ; Wang XD; Guo ZS; Ning D 收藏  |  浏览/下载：15/0  |  提交时间：2010/11/15 ELECTRONIC-STRUCTURE  CARRIER RELAXATION  ENERGY-LEVELS  SPECTROSCOPY   Electronic characteristics of InAs self-assembled quantum dots 会议论文 9th international conference on modulated semiconductor structures (mss9), fukuoka, japan, jul 12-16, 1999 Wang HL; Feng SL; Zhu HJ; Ning D; Chen F 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 InAs/GaAs quantum dots  self-assembled structure  DLTS  PL  band offset  ENERGY-LEVELS  CARRIER RELAXATION  SPECTROSCOPY   High-field cyclotron resonance and electron-phonon interaction in modulation-doped multiple quantum well structures 会议论文 13th international conference on high magnetic fields in semiconductor physics, nijmegen, netherlands, aug 10-14, 1998 Wang YJ; Jiang ZX; McCombe BD; Peeters FM; Wu XG; Hai GQ; Eustis TJ; Schaff W 收藏  |  浏览/下载：15/0  |  提交时间：2010/11/15 cyclotron resonance  electron-phonon interaction  electron-electron interaction  high magnetic fields  EXCHANGE ENHANCEMENT  GAAS  HETEROSTRUCTURES  GAS  LIMIT  HETEROJUNCTIONS  POLARONS  MODES  LEVEL