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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Defect states in cubic GaN epilayer grown on GaAs by metalorganic vapor phase epitaxy 会议论文 4th international conference on nitride semiconductors (icns-4), denver, colorado, jul 16-20, 2001 Xu SJ; Or CT; Li Q; Zheng LX; Xie MH; Tong SY; Yang H 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/15 OPTICAL-TRANSITIONS  PHOTOLUMINESCENCE   Energy band and acceptor binding energy of GaN and AlxGa1-xN 会议论文 iumrs international conference of advanced materials, beijing, peoples r china, jun 13-18, 1999 Xia JB; Cheah KW; Wang XL; Sun DZ; Kong MY 收藏  |  浏览/下载：15/0  |  提交时间：2010/11/15 acceptor binding energy  hole effective-mass Hamiltonian  wurtzite GaN   Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy 会议论文 international conference on advanced materials: sympopsium m - silicon-based materials and devices, beijing, peoples r china, jun 13-18, 1999 作者:  Yu F 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 solid phase epitaxy  silicon on sapphire (SOS)  carrier mobility