Energy band and acceptor binding energy of GaN and AlxGa1-xN

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	Energy band and acceptor binding energy of GaN and AlxGa1-xN
	Xia JB ; Cheah KW ; Wang XL ; Sun DZ ; Kong MY
	2000
会议名称	iumrs international conference of advanced materials
会议日期	jun 13-18, 1999
会议地点	beijing, peoples r china
关键词	acceptor binding energy hole effective-mass Hamiltonian wurtzite GaN
页码	204-206
通讯作者	xia jb hong kong bapitst univ dept phys hong kong hong kong peoples r china.
中文摘要	the hole effective-mass hamiltonian for the semiconductors of wurtzite structure is established, and the effective-mass parameters of gan and alxga1-xn are given. besides the asymmetry in the z and x, y directions, the linear term of the momentum operator in the hamiltonian is essential in determining the valence band structure, which is different from that of the zinc-blende structure. the binding energies of acceptor states are calculated by solving strictly the effective-mass equations. the binding energies of donor and acceptor for wurtzite gan are 20 and 131, 97 mev, respectively, which are inconsistent with the recent experimental results. it is proposed that there are two kinds of acceptors in wurtzite gan. one kind is the general acceptor such as c, substituting n, which satisfies the effective-mass theory, and the other includes mg, zn, cd etc., the binding energy of which deviates from that given by the effective-mass theory. experimentally, wurtzite gan was grown by the mbe method, and the pl spectra were measured. three main peaks are assigned to the da transitions from the two kinds of acceptor. some of the transitions were identified as coming from the cubic phase of gan, which appears randomly within the predominantly hexagonal material. the binding energy of acceptor in aln is about 239, 158 mev, that in alxga1-xn alloys (x approximate to 0.2) is 147, 111 mev, close to that in gan. (c) 2000 published by elsevier science s.a. all rights reserved.
英文摘要	the hole effective-mass hamiltonian for the semiconductors of wurtzite structure is established, and the effective-mass parameters of gan and alxga1-xn are given. besides the asymmetry in the z and x, y directions, the linear term of the momentum operator in the hamiltonian is essential in determining the valence band structure, which is different from that of the zinc-blende structure. the binding energies of acceptor states are calculated by solving strictly the effective-mass equations. the binding energies of donor and acceptor for wurtzite gan are 20 and 131, 97 mev, respectively, which are inconsistent with the recent experimental results. it is proposed that there are two kinds of acceptors in wurtzite gan. one kind is the general acceptor such as c, substituting n, which satisfies the effective-mass theory, and the other includes mg, zn, cd etc., the binding energy of which deviates from that given by the effective-mass theory. experimentally, wurtzite gan was grown by the mbe method, and the pl spectra were measured. three main peaks are assigned to the da transitions from the two kinds of acceptor. some of the transitions were identified as coming from the cubic phase of gan, which appears randomly within the predominantly hexagonal material. the binding energy of acceptor in aln is about 239, 158 mev, that in alxga1-xn alloys (x approximate to 0.2) is 147, 111 mev, close to that in gan. (c) 2000 published by elsevier science s.a. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:26导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:26z (gmt). no. of bitstreams: 1 2960.pdf: 81466 bytes, checksum: 77f72eb8eec43da8bff162517fa1398b (md5) previous issue date: 2000; iumrs.; amer xtal technol.; sut associates.; univ calif san diego.; shanghai inst met.; hong kong bapitst univ, dept phys, hong kong, hong kong, peoples r china; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	iumrs.; amer xtal technol.; sut associates.; univ calif san diego.; shanghai inst met.
会议录	materials science and engineering b-solid state materials for advanced technology, 75 (2-3)
会议录出版者	elsevier science sa ; po box 564, 1001 lausanne, switzerland
会议录出版地	po box 564, 1001 lausanne, switzerland
学科主题	半导体材料
语种	英语
ISSN号	0921-5107
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14999]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xia JB,Cheah KW,Wang XL,et al. Energy band and acceptor binding energy of GaN and AlxGa1-xN[C]. 见:iumrs international conference of advanced materials. beijing, peoples r china. jun 13-18, 1999.