Design of flexible inorganic BiFe0.93Mn0.07O3 ferroelectric thin films for nonvolatile memory

doi:10.1016/j.jmat.2020.04.010

	Design of flexible inorganic BiFe0.93Mn0.07O3 ferroelectric thin films for nonvolatile memory
	Yang, Bingbing 3; Li, Chenhui 2,3; Liu, Miao 2,3; Wei, Renhuai 3; Tang, Xianwu 3; Hu, Ling 3; Song, Wenhai 3; Zhu, Xuebin 3; Sun, Yuping 1,3
刊名	JOURNAL OF MATERIOMICS
	2020-09-01
卷号	6
关键词	Inorganic ferroelectric Flexible electronics Lead-free BiFe0.93Mn0.07O3
ISSN号	2352-8478
DOI	10.1016/j.jmat.2020.04.010
通讯作者	Zhu, Xuebin(xbzhu@issp.ac.cn) ; Sun, Yuping(ypsun@issp.ac.cn)
英文摘要	Flexible ferroelectric memories, endowing with high data storage density, provide a chance for the nextgeneration wearable electronics. Here, flexible inorganic Mn-doped BiFeO3 thin films were directly integrated on fluorophlogopite mica (F-Mica) substrates by an easy and low-cost all solution chemical solution deposition (AS-CSD) route. The integration of LaNiO3 buffer layer can improve the film surface density and uniformity. The flexible characteristic can be achieved by reducing the thickness of F-Mica substrates for the ferroelectric thin films. In contrast to BiFe0.93Mn0.07O3/LaNiO3/Si thin film deposited on rigid substrates (Si), the BiFe0.93Mn0.07O3/LaNiO3/F-mica fabricated on F-Mica show better ferroelectric performances due to the improved crystal growth and less defects. More importantly, the obtained BiFe0.93Mn0.07O3/LaNiO3/F-mica ferroelectric thin films still show large remnant polarization of P-r similar to 64 mu C/cm(2) (deterioration of similar to 7.2%), good antifatigue properties up to 1.2 x 10(8) cycles and outstanding retention behaviors for 1.6 x 10(4) s after continuous bending. This work will provide a feasible route to fabricate flexible inorganic ferroelectric thin films through low-cost solution method and show attractive comprehensive performances in next-generation wearable smart devices. (C) 2020 The Chinese Ceramic Society. Production and hosting by Elsevier B.V.
资助项目	National Key Basic Research program[2014CB931704] ; National Natural Science Foundation of China[U1432137] ; Chinese Academy of Sciences Large-Scale Scientific Facility[U1432137]
WOS关键词	ELECTRICAL-PROPERTIES ; ENERGY DENSITY ; BUFFER LAYER ; LANIO3 ; CAPACITORS ; TITANATE ; STORAGE
WOS研究方向	Chemistry ; Materials Science ; Physics
语种	英语
出版者	ELSEVIER
WOS记录号	WOS:000544759500004
资助机构	National Key Basic Research program ; National Natural Science Foundation of China ; Chinese Academy of Sciences Large-Scale Scientific Facility
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/71038]
专题	中国科学院合肥物质科学研究院
通讯作者	Zhu, Xuebin; Sun, Yuping
作者单位	1.Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Peoples R China 2.Univ Sci & Technol China, Hefei 230026, Peoples R China 3.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
推荐引用方式 GB/T 7714	Yang, Bingbing,Li, Chenhui,Liu, Miao,et al. Design of flexible inorganic BiFe0.93Mn0.07O3 ferroelectric thin films for nonvolatile memory[J]. JOURNAL OF MATERIOMICS,2020,6.
APA	Yang, Bingbing.,Li, Chenhui.,Liu, Miao.,Wei, Renhuai.,Tang, Xianwu.,...&Sun, Yuping.(2020).Design of flexible inorganic BiFe0.93Mn0.07O3 ferroelectric thin films for nonvolatile memory.JOURNAL OF MATERIOMICS,6.
MLA	Yang, Bingbing,et al."Design of flexible inorganic BiFe0.93Mn0.07O3 ferroelectric thin films for nonvolatile memory".JOURNAL OF MATERIOMICS 6(2020).