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	P-type doping of gainnas quaternary alloys
	Shi, Hongliang1; Duan, Yifeng2
刊名	Physics letters a
	2008-12-22
卷号	373期号:1页码:165-168
关键词	First-principles Alloy Doping Formation energy Transition energy Band offset
ISSN号	0375-9601
DOI	10.1016/j.physleta.2008.11.010
通讯作者	Shi, hongliang(hlshi@semi.ac.cn)
英文摘要	Using the first-principles band-structure method, we investigate the p-type doping properties and band structural parameters of the random ga(1-x)in(x)n(1-y)as(y) quaternary alloys. we show that the mg(ga) substitution is a better choice than znga to realize the p-type doping because of the lower transition energy level and lower formation energy. the natural valence band alignment of gaas and gainnas alloys is also calculated, and we find that the valence band maximum becomes higher with the increasing in composition. therefore, we can tailor the band offset as desired which is helpful to confine the electrons effectively in optoelectronic devices. (c) 2008 published by elsevier b.v.
WOS关键词	SPECIAL QUASIRANDOM STRUCTURES ; SEMICONDUCTORS ; GAAS
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000261795700034
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427346
专题	半导体研究所
通讯作者	Shi, Hongliang
作者单位	1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.China Univ Min & Technol, Sch Sci, Dept Phys, Xuzhou 221008, Peoples R China
推荐引用方式 GB/T 7714	Shi, Hongliang,Duan, Yifeng. P-type doping of gainnas quaternary alloys[J]. Physics letters a,2008,373(1):165-168.
APA	Shi, Hongliang,&Duan, Yifeng.(2008).P-type doping of gainnas quaternary alloys.Physics letters a,373(1),165-168.
MLA	Shi, Hongliang,et al."P-type doping of gainnas quaternary alloys".Physics letters a 373.1(2008):165-168.

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