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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 专题：上海微系统与信息技术研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Effect of implanting silicon in buried oxide on the radiation hardness of the partially-depleted CMOS/SOI 期刊论文 ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2007, p 215-217, 2007, 页码: 215-217 He, Wei (Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences); Zhang, Zheng-Xuan; Zhang, En-Xia; Qian, Cong; Tian, Hao; Wang Xi 收藏  |  浏览/下载：14/0  |  提交时间：2012/05/31 Effect of nitrogen implantation technologies on total dose rad-hardness of SIMON materials 期刊论文 Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2005, 卷号: 26, 期号: 6, 页码: 1269-1272 Zhang, Enxia1; Qian, Cong1; Zhang, Zhengxuan1; Wang, Xi1; Zhang, Guoqiang2; Li, Ning2; Zheng, Zhongshan2; Liu, Zhongli2 收藏  |  浏览/下载：20/0  |  提交时间：2012/03/24 Optimal transitions in beta-FeSi2 films 期刊论文 PHYSICAL REVIEW B, 1996, 卷号: 54, 期号: 16, 页码: 11126-11128 Wang,LW; Ostling,M; Yang,K; Qin,LH; Lin,CL; Chen,XD; Zou,SC; Zheng,YX; Qian,YH 收藏  |  浏览/下载：14/0  |  提交时间：2012/03/25 IRON DISILICIDE  BAND  FESI2   Analysis of implantation-induced damage and amorphization of GaSb 期刊论文 PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1996, 卷号: 157, 期号: 1, 页码: 57-63 Zheng, YX; Chen, LY; Zhou, SM; Wang, YD; Qian, YH; Lin, CL; He, ZP; Zheng, AS; Li, JM 收藏  |  浏览/下载：14/0  |  提交时间：2012/03/25 ION-IMPLANTATION   CHARACTERISTICS OF HIGH-ENERGY N+-IMPLANTED DAMAGE IN GASB 期刊论文 SOLID STATE COMMUNICATIONS, 1995, 卷号: 96, 期号: 8, 页码: 593-596 ZHENG, YX; QIAN, YH; CHEN, LY; ZHOU, SM; WANG, YD; LIN, CL; HE, ZP; ZHENG, AS 收藏  |  浏览/下载：9/0  |  提交时间：2012/03/25 NITROGEN PAIRS  GAP