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| Defect appearance on 4H-SiC homoepitaxial layers via molten KOH etching 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 531, 页码: 125359
作者: X.F. Liu; G.G. Yan; L. Sang; Y.X. Niu; Y.W. He; Z.W. Shen; Z.X. Wen; J. Chen; W.S. Zhao; L. Wang; M. Guan; F. Zhang; G.S. Sun; Y.P. Zeng
  收藏 | 浏览/下载：11/0 | 提交时间：2021/11/26 |
| Effect of C/Si ratio on growth of 4H-SiC epitaxial layers on on-axis and 4° off-axis substrates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 531, 页码: 125362
作者: G.G. Yan; Y.W. He; Z.W. Shen; Y.X. Cui; J.T. Li; W.S. Zhao; L. Wang; X.F. Liu; F. Zhang; G.S. Sun; Y.P. Zeng
收藏 | 浏览/下载：9/0 | 提交时间：2021/11/26 |
| Temperature and excitation wavelength dependence of circular and linear photogalvanic effect in a three dimensional topological insulator Bi 2 Se 3 期刊论文
Journal of Physics Condensed Matter, 2019, 卷号: 31, 期号: 41, 页码: 415702
作者: Y M Wang ; J L Yu ; X L Zeng ; Y H Chen ; Y Liu ; S Y Cheng ; Y F Lai ; C M Yin ; K He 7 ; Q K Xue
收藏 | 浏览/下载：6/0 | 提交时间：2020/07/30 |
| Homoepitaxial growth of multiple 4H-SiC wafers assembled in a simple holder via conventional chemical vapor deposition 期刊论文
Journal of Crystal Growth, 2019, 卷号: 507, 页码: 283-287
作者: X.F. Liu ; G.G. Yan ; Z.W. Shen ; Z.X. Wen ; J. Chen ; Y.W. He ; W.S. Zhao ; L. Wang ; M. Guan ; F. Zhang ; G.S. Sun ; Y.P. Zeng
收藏 | 浏览/下载：8/0 | 提交时间：2020/07/31 |
| The self-compensation effect of heavily Mg doped p-GaN films studied by SIMS and photoluminescence 期刊论文
Superlattices and Microstructures, 2019, 卷号: 133, 页码: 106177
作者: H.R. Qi ; S. Zhang ; S.T. Liu ; F. Liang ; L.K. Yi ; J.L. Huang ; M. Zhou ; Z.W. He ; D.G. Zhao ; D.S. Jiang
收藏 | 浏览/下载：7/0 | 提交时间：2020/07/31 |
| Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
作者: X. LI; Z. S. LIU; D. G. ZHAO; D. S. JIANG; P. CHEN
收藏 | 浏览/下载：20/0 | 提交时间：2018/07/11 |
| XPS study of impurities in Si-doped AlN film 期刊论文
surface and interface analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309
F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; L. C. Le; W. Liu; X.G. He; X. J. Li; X Li; S. T Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
收藏 | 浏览/下载：29/0 | 提交时间：2017/03/10 |
| The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文
aip advances, 2016, 卷号: 6, 页码: 035124
P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du
收藏 | 浏览/下载：24/0 | 提交时间：2017/03/10 |
| Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文
applied physics a, 2016, 卷号: 122, 期号: 9
F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; X. Li; S. T. Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
收藏 | 浏览/下载：14/0 | 提交时间：2017/03/10 |
| The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content 期刊论文
physica status solidi (a), 2016, 卷号: 213, 期号: 8, 页码: 2223–2228
X. Li; D. G. Zhao*; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; F. Liang; L. Q. Zhang; J. P. Liu; H. Yang
收藏 | 浏览/下载：13/0 | 提交时间：2017/03/10 |
