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CORC

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Influence of mode q factor and absorption loss on dynamical characteristics for semiconductor microcavity lasers by rate equation analysis 期刊论文
Ieee journal of quantum electronics, 2011, 卷号: 47, 期号: 12, 页码: 1519-1525
作者:  Lv, Xiao-Meng;  Zou, Ling-Xiu;  Huang, Yong-Zhen;  Yang, Yue-De;  Xiao, Jin-Long
收藏  |  浏览/下载：28/0  |  提交时间：2019/05/12
Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition 期刊论文
journal of alloys and compounds, 2011, 卷号: 509, 期号: 3, 页码: 748-750
作者:  Yang H;  Jiang DS;  Le LC;  Zhang SM;  Wu LL
收藏  |  浏览/下载：46/3  |  提交时间：2011/07/05
Analysis of Modified Williamson-Hall Plots on GaN Layers 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 1, 页码: article no.16101
Liu JQ; Qiu YX; Wang JF; Xu K; Yang H
收藏  |  浏览/下载：38/3  |  提交时间：2011/07/05
Dtadh and quantum critical phenomena caused by anisotropy and external magnetic field for spin-1/2 heisenberg diamond chains 期刊论文
Physics letters a, 2010, 卷号: 374, 期号: 22, 页码: 2274-2280
作者:  Li, Yan-Chao
收藏  |  浏览/下载：15/0  |  提交时间：2019/05/12
DTADH and quantum critical phenomena caused by anisotropy and external magnetic field for spin-1/2 Heisenberg diamond chains 期刊论文
physics letters a, 2010, 卷号: 374, 期号: 22, 页码: 2274-2280
Li YC (Li Yan-Chao)
收藏  |  浏览/下载：17/0  |  提交时间：2010/06/05
Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 2, 页码: art. no. 026804
Lu GJ (Lu Guo-Jun); Zhu JJ (Zhu Jian-Jun); Jiang DS (Jiang De-Sheng); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui)
收藏  |  浏览/下载：110/2  |  提交时间：2010/04/22
Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer 期刊论文
thin solid films, 2010, 卷号: 518, 期号: 17, 页码: 5028-5031
Wang H (Wang H.); Jiang DS (Jiang D. S.); Jahn U (Jahn U.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Yang H (Yang H.)
收藏  |  浏览/下载：60/2  |  提交时间：2010/08/17
An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文
journal of alloys and compounds, 2010, 卷号: 489, 期号: 2, 页码: 461-464
作者:  Wang YT;  Zhao DG;  Zhang SM;  Yang H;  Jiang DS
收藏  |  浏览/下载：146/11  |  提交时间：2010/04/04
Electric field driven quantum phase transition between band insulator and topological insulator 期刊论文
Applied physics letters, 2009, 卷号: 95, 期号: 22, 页码: 3
作者:  Li, Jun;  Chang, Kai
收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Sun, GS; Zhao, YM; Wang, L; Wang, L; Zhao, WS; Liu, XF; Ji, G; Zeng, YP
收藏  |  浏览/下载：40/0  |  提交时间：2010/03/09

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