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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis 期刊论文 science china-technological sciences, 2010, 卷号: 53, 期号: 11, 页码: 3002-3005 Huang TM (Huang TianMao); Chen NF (Chen NuoFu); Zhang XW (Zhang XingWang); Bai YM (BaiYiMing); Yin ZG (Yin ZhiGang); Shi HW (Shi HuiWei); Zhang H (Zhang Han); Wang Y (Wang Yu); Wang YS (Wang YanShuo); Yang XL (Yang XiaoLi) 收藏  |  浏览/下载：25/0  |  提交时间：2010/11/14 polycrystalline silicon thin film  aluminum induced crystallization  (111) preferred orientation  INDUCED LAYER-EXCHANGE  AMORPHOUS-SILICON  SOLAR-CELLS  GLASS  SI  ORIENTATION  MODEL   First-principles study of p-type transparent conductive oxides CuXO2 (X=Y, Sc, and Al) 期刊论文 journal of applied physics, 2008, 卷号: 104, 期号: 7, 页码: art. no. 073527 Shi, LJ; Fang, ZJ; Li, JB 收藏  |  浏览/下载：65/0  |  提交时间：2010/03/08 AUGMENTED-WAVE METHOD  DELAFOSSITE STRUCTURE  ELECTRONIC-STRUCTURE  V SEMICONDUCTORS  THIN-FILMS  II-VI  CUSCO2  CUALO2  ENERGY  CUYO2   Optical properties of the e-0+delta(0) energy level higher than the bandgap of gaas studied by micro-photoluminescence technique 期刊论文 Acta physica sinica, 2007, 卷号: 56, 期号: 7, 页码: 4213-4217 作者:  Bao Zhi-Hua;  Jing Wei-Ping;  Luo Xiang-Dong;  Tan Ping-Heng 收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12 Semi-insulated gaas  Micro-photoluminescence  Spin-orbit split-off valence band   Optical properties of the E-0+Delta(0) energy level higher than the bandgap of GaAs studied by micro-photoluminescence technique 期刊论文 acta physica sinica, 2007, 卷号: 56, 期号: 7, 页码: 4213-4217 Bao ZH (Bao Zhi-Hua); Jing WP (Jing Wei-Ping); Luo XD (Luo Xiang-Dong); Tan PH (Tan Ping-Heng) 收藏  |  浏览/下载：125/0  |  提交时间：2010/03/29 semi-insulated GaAs   High-performance eml grown on taper-masked pattern substrates by ultra-low-pressure mocvd 期刊论文 Journal of crystal growth, 2006, 卷号: 288, 期号: 1, 页码: 27-31 作者:  Zhao, Q;  Pan, JQ;  Zhang, J;  Zhu, HL;  Wang, W 收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12 Selective area growth  Ultra-low pressure  Ingaasp  Tapered mask  Integrated device   High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD 期刊论文 journal of crystal growth, 2006, 卷号: 288, 期号: 1, 页码: 27-31 作者:  Pan JQ 收藏  |  浏览/下载：66/0  |  提交时间：2010/04/11 selective area growth  ultra-low pressure  InGaAsP  tapered mask  integrated device  BURIED-HETEROSTRUCTURE  MONOLITHIC INTEGRATION  SELECTIVE MOVPE  LASER  MODULATOR   Recombination property of nitrogen-acceptor-bound states in ZnO 期刊论文 journal of applied physics, 2006, 卷号: 99, 期号: 4, 页码: art.no.046101 Yang XD; Xu ZY; Sun Z; Sun BQ; Ding L; Wang FZ; Ye ZZ 收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11 MOLECULAR-BEAM EPITAXY  P-TYPE ZNO  OPTICAL-PROPERTIES  EXCITON FORMATION  PHOTOLUMINESCENCE  FILMS  SPECTROSCOPY  DYNAMICS  IMPURITY  ENERGY   High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD 会议论文 3rd international conference on materials for advanced technologies/9th international conference on advanced materials, singapore, singapore, jul 03-08, 2005 Zhao, Q; Pan, JQ; Zhang, J; Zhu, HL; Wang, W 收藏  |  浏览/下载：156/44  |  提交时间：2010/03/29 selective area growth   Photoluminescence properties of a gan0.015as0.985/gaas single quantum well under short pulse excitation 期刊论文 Applied physics letters, 2001, 卷号: 79, 期号: 7, 页码: 958-960 作者:  Luo, XD;  Xu, ZY;  Ge, WK;  Pan, Z;  Li, LH 收藏  |  浏览/下载：7/0  |  提交时间：2019/05/12 Photoluminescence properties of a GaN0.015As0.985/GaAs single quantum well under short pulse excitation 期刊论文 applied physics letters, 2001, 卷号: 79, 期号: 7, 页码: 958-960 Luo XD; Xu ZY; Ge WK; Pan Z; Li LH; Lin YW 收藏  |  浏览/下载：124/4  |  提交时间：2010/08/12 MOLECULAR-BEAM EPITAXY  BAND-GAP ENERGY  TEMPERATURE PHOTOLUMINESCENCE  MECHANISM  GANXAS1-X  EMISSION  NITROGEN  ALLOYS  SHIFT  GANAS