Photoluminescence properties of a GaN0.015As0.985/GaAs single quantum well under short pulse excitation
Luo XD ; Xu ZY ; Ge WK ; Pan Z ; Li LH ; Lin YW
刊名applied physics letters
2001
卷号79期号:7页码:958-960
关键词MOLECULAR-BEAM EPITAXY BAND-GAP ENERGY TEMPERATURE PHOTOLUMINESCENCE MECHANISM GANXAS1-X EMISSION NITROGEN ALLOYS SHIFT GANAS
ISSN号0003-6951
通讯作者luo xd,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china.
中文摘要under short pulse laser excitation, we have observed an extra high-energy photoluminescence (pl) emission from ganas/gaas single quantum wells (qws). it dominates the pl spectra under high excitation and/or at high temperature. by measuring the pl dependence on both temperature and excitation power and by analyzing the time-resolved pl results, we have attributed the pl peak to the recombination of delocalized excitons in qws. furthermore, a competition process between localized and delocalized excitons is observed in the temperature-dependent pl spectra under the short pulse excitation. this competition is believed to be responsible for the temperature-induced s-shaped pl shift often observed in the disordered alloy semiconductor system under continuous-wave excitation. (c) 2001 american institute of physics.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/12124]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Luo XD,Xu ZY,Ge WK,et al. Photoluminescence properties of a GaN0.015As0.985/GaAs single quantum well under short pulse excitation[J]. applied physics letters,2001,79(7):958-960.
APA Luo XD,Xu ZY,Ge WK,Pan Z,Li LH,&Lin YW.(2001).Photoluminescence properties of a GaN0.015As0.985/GaAs single quantum well under short pulse excitation.applied physics letters,79(7),958-960.
MLA Luo XD,et al."Photoluminescence properties of a GaN0.015As0.985/GaAs single quantum well under short pulse excitation".applied physics letters 79.7(2001):958-960.
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