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| The impact of indium tin oxide deposition and post annealing on the passivation property of TOPCon solar cells 期刊论文
Solar Energy, 2018
作者: Zhang PF(张鹏飞) ; Tao K(陶科); Jiang S(姜帅); Jia R(贾锐); Zhou Y(周颖)
  收藏 | 浏览/下载：26/0 | 提交时间：2019/04/19 |
| Impact of ALD TiN Capping Layer on Interface 期刊论文
IEEE Electron Device Letter, 2018
作者: Zhao C(赵超); Ye TC(叶甜春); Yang H(杨红); Tang B(唐波); Xu H(徐昊)
收藏 | 浏览/下载：11/0 | 提交时间：2019/05/20 |
| Study of γ-ray irradiation influence on TiN/HfO 2 /Si MOS capacitor by C-V and DLTS 期刊论文
Superlattices and Microstructures, 2018
作者: Yun Li; Yao Ma; Wei Lin; Peng Dong; zhimei Yang
收藏 | 浏览/下载：38/0 | 提交时间：2019/04/18 |
| Band-Edge Work Function Obtained by Plasma Doping TiN Metal Gate for nMOS Device Application 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICE, 2018
作者: Shan Tang; Tao GL(陶桂龙); Li JF(李俊峰); Zhu HL(朱慧珑); Wang XL(王晓磊)
收藏 | 浏览/下载：27/0 | 提交时间：2019/05/20 |
| Evolution of traps in TiN/O 3 -sourced Al 2 O 3 /GaN gate structures with thermal annealing temperature 期刊论文
Journal of Vacuum Science & Technology B, 2018
作者: Xiang JJ(项金娟); Liu XY(刘新宇); Huang S(黄森); Bao QL(包琦龙); Wang XH(王鑫华)
收藏 | 浏览/下载：21/0 | 提交时间：2019/04/19 |
| Short-Term and Long-Term Plasticity Mimicked in Low-Voltage Ag/GeSe/TiN Electronic Synapse 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2018
作者: Yi Sun; Hui Xu; Sen Liu; Bing Song; Haijun Liu
收藏 | 浏览/下载：13/0 | 提交时间：2019/04/10 |
| Improvement of Device Reliability by Introducing a BEOL-Compatible TiN Barrier Layer in CBRAM 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
作者: Cao RR(曹荣荣); Liu M(刘明); Long SB(龙世兵); Lv HB(吕杭炳); Wang Y(王艳)
收藏 | 浏览/下载：21/0 | 提交时间：2018/07/12 |
| Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-K metal gate NMOSFET with kMC TDDB simulations 期刊论文
Chinese Physics B, 2016
作者: Xu H(徐昊); Yang H(杨红); Luo WC(罗维春); Wang YR(王艳蓉); Tang B(唐波)
收藏 | 浏览/下载：7/0 | 提交时间：2017/05/09 |
| Understanding the role of TiN barrier layer on electrical performance of MOS device with ALD-TiN/ALD-TiAlC metal gate stacks 期刊论文
ECS Journal of Solid State Science and Technology, 2016
作者: Xiang JJ(项金娟); Li TT(李亭亭); Wang XL(王晓磊); Han K(韩锴); Li JF(李俊峰)
收藏 | 浏览/下载：11/0 | 提交时间：2017/05/09 |
| Attainment of dual-band edge work function by using a single metal gate and single high-k dielectric via ion implantation for HP CMOS device 期刊论文
Solid-State Electronics, 2016
作者: Xu GB(许高博); Zhou HJ(周华杰); Zhu HL(朱慧珑); Liu JB(刘金彪); Wang Y(王垚)
收藏 | 浏览/下载：26/0 | 提交时间：2017/05/09 |
