Attainment of dual-band edge work function by using a single metal gate and single high-k dielectric via ion implantation for HP CMOS device

CORC > 微电子研究所 > 中国科学院微电子研究所 > 集成电路先导工艺研发中心

	Attainment of dual-band edge work function by using a single metal gate and single high-k dielectric via ion implantation for HP CMOS device
	Xu GB(许高博); Zhou HJ(周华杰); Zhu HL(朱慧珑); Liu JB(刘金彪); Wang Y(王垚); Liang QQ(梁擎擎); Li JF(李俊峰); Xiang JJ(项金娟); Wu H(吴昊); Xu QX(徐秋霞)
刊名	Solid-State Electronics
	2016
文献子类	期刊论文
英文摘要	Attainment of dual band-edge effective work functions by using a single metal gate and single high k gate dielectric via P/BF2 implantation into a TiN metal gate for HP HKMG CMOS device applications are investigated under a gate-last process flow for the first time. The flat band voltage (VFB) modulations of about 750 mV/570 mV for N-/P-type MOS device with P/BF2 implanted TiN/HfO2/ILSiO2 gate stack are obtained respectively in the experiment range.
内容类型	期刊论文
源URL	[http://159.226.55.106/handle/172511/16223]
专题	微电子研究所_集成电路先导工艺研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Xu GB,Zhou HJ,Zhu HL,et al. Attainment of dual-band edge work function by using a single metal gate and single high-k dielectric via ion implantation for HP CMOS device[J]. Solid-State Electronics,2016.
APA	Xu GB.,Zhou HJ.,Zhu HL.,Liu JB.,Wang Y.,...&Ye TC.(2016).Attainment of dual-band edge work function by using a single metal gate and single high-k dielectric via ion implantation for HP CMOS device.Solid-State Electronics.
MLA	Xu GB,et al."Attainment of dual-band edge work function by using a single metal gate and single high-k dielectric via ion implantation for HP CMOS device".Solid-State Electronics (2016).