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| Influence on curvature induced stress to the flatband voltage and interface density of 4H-SiC MOS structure 期刊论文 Journal of Crystal Growth, 2018 作者: Ling Sang; Hengyu Xu; Caiping Wan; Jin-ping Ao 收藏  |  浏览/下载:14/0  |  提交时间:2019/04/19 |
| 半导体器件的制造方法 专利 专利号: US9899270, 申请日期: 2018-02-20, 公开日期: 2014-06-05 作者: 徐秋霞; 朱慧珑; 许高博; 周华杰; 梁擎擎 收藏  |  浏览/下载:17/0  |  提交时间:2019/03/27 |
| Investigation of spatial charge distribution and electrical dipole in atomic layer deposited Al2O3 on 4H-SiC 期刊论文 J Physics D: Applied Physics, 2016 作者: Wang XL(王晓磊) 收藏  |  浏览/下载:7/0  |  提交时间:2017/05/09 |
| Effect of Mo capping layers thickness on the perpendicular magnetic anisotropy in MgO/CoFeB based top magnetic tunnel junction structure 期刊论文 Chin. Phys. B, 2016 作者: Zhong HC(钟汇才) 收藏  |  浏览/下载:13/0  |  提交时间:2017/05/09 |
| Investigation of the Interface Quality and Reliability of 4H-SiC MOS Structure with NO and Forming Gas Annealing Treatment 期刊论文 Materials Science Forum, 2016 作者: Wang YY(王弋宇); Peng CY(彭朝阳); Bai Y(白云); Tang YD(汤益丹); Wu J(吴佳) 收藏  |  浏览/下载:11/0  |  提交时间:2017/05/08 |
| Effect of interface and bulk traps on the C–V characterization of a LPCVD-SiNx/AlGaN/GaN metal-insulator-semiconductor structure 期刊论文 Semiconductor Science and Technology, 2016 作者: Huang S(黄森); Wang XH(王鑫华) 收藏  |  浏览/下载:9/0  |  提交时间:2017/05/08 |
| Dependence of electrostatic potential distribution of Al2O3/Ge structure on Al2O3 thickness 期刊论文 Surface Science, 2016 作者: Wang XL(王晓磊) 收藏  |  浏览/下载:9/0  |  提交时间:2017/05/09 |
| 半导体器件的制造方法 专利 专利号: US9136181, 申请日期: 2015-09-15, 公开日期: 2014-06-05 作者: 周华杰; 陈大鹏; 许高博; 徐秋霞; 朱慧珑 收藏  |  浏览/下载:21/0  |  提交时间:2016/09/19 |
| Channel Hot-Carrier Degradation Characteristics and Trap Activities of High-k/Metal Gate nMOSFETs 会议论文 作者: Wang WW(王文武); Luo WC(罗维春); Yang H(杨红) 收藏  |  浏览/下载:6/0  |  提交时间:2014/10/30 |
| Comprehensive understanding of the effect of electric dipole at high-k/SiO2 interface on the flatband voltage shift in metal-oxide-semiconductor device 外文期刊 2010 作者: Han, K; Wang, WW; Ma, XL; Chen, DP; Zhang, J 收藏  |  浏览/下载:22/0  |  提交时间:2010/11/26
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