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Understanding electrical-thermal transport characteristics of organic semiconductors: violation of Wiedemann-Franz law 期刊论文
Journal of Applied Physics, 2016
作者:  Lu ND(卢年端);  Gao N(高南);  Liu M(刘明)
收藏  |  浏览/下载:10/0  |  提交时间:2017/05/11
Prognostics and Health Management for VDMOS Basedon Physics-of-Failure 会议论文
作者:  Luo JJ(罗家俊);  Han ZS(韩郑生);  Zhang YL(张宇隆);  Wang LL(王路璐);  Gao B(高博)
收藏  |  浏览/下载:8/0  |  提交时间:2017/05/19
Highly improved resistive switching performances of the self-doped Pt-HfO2Cu-Cu devices by atomic layer deposition 期刊论文
Science China Physics, Mechanics & Astronomy, 2016
作者:  Liu S(刘森);  Wang W(王伟);  Liu M(刘明)
收藏  |  浏览/下载:9/0  |  提交时间:2017/05/11
Failure Analysis of the VDMOS Device with VSD and RDS (on) Exceeded Limit Based on Reliability Physics 会议论文
作者:  Li Q(李庆);  Gao B(高博);  Deng HT(邓海涛);  Wang LX(王立新);  Luo JJ(罗家俊)
收藏  |  浏览/下载:12/0  |  提交时间:2017/05/19
Investigation of spatial charge distribution and electrical dipole in atomic layer deposited Al2O3 on 4H-SiC 期刊论文
J Physics D: Applied Physics, 2016
作者:  Wang XL(王晓磊)
收藏  |  浏览/下载:7/0  |  提交时间:2017/05/09
Synthesis of sub-millimeter Bi-/multi-layer graphene by designing a sandwiched structure using copper foils 期刊论文
Applied Physics Letter, 2016
作者:  Jia KP(贾昆鹏)
收藏  |  浏览/下载:19/0  |  提交时间:2017/05/09
Intrinsic carrier mobility extraction based on a new quasi-analytical model for graphene field-effect transistor 期刊论文
Journal of Physics D: Applied Physics, 2016
作者:  Zhang DY(张大勇);  Shi JY(史敬元);  Wang SQ(王少青);  MUHAMMAD ASIF;  Peng SA(彭松昂)
收藏  |  浏览/下载:8/0  |  提交时间:2017/05/08
A MEMS thermal shear stress sensor produced by a combination of substrate-free structures with anodic bonding technology 期刊论文
Applied Physics Letters, 2016
作者:  Ou Y(欧毅);  Qu FR(屈芙蓉);  Wang GY(王冠亚);  Nie MY(聂孟岩);  Li ZG(李志刚)
收藏  |  浏览/下载:12/0  |  提交时间:2017/04/14
Surface-potential-based physical compact model for graphene field effect transistor 期刊论文
Journal of Applied Physics, 2016
作者:  Wang LF(汪令飞);  Peng SA(彭松昂);  Wang W(王伟);  Xu GW(徐光伟);  Ji ZY(姬濯宇)
收藏  |  浏览/下载:16/0  |  提交时间:2017/05/11
Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeOx/Al2O3 gate dielectrics 期刊论文
J Physics D: Applied Physics, 2016
作者:  Wang XL(王晓磊)
收藏  |  浏览/下载:9/0  |  提交时间:2017/05/09


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