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Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 2, 页码: article no.27801
作者:  Xu B
收藏  |  浏览/下载：51/3  |  提交时间：2011/07/05
Microscopic study on the carrier distribution in optoelectronic device structures: Experiment and modeling 期刊论文
proceedings of spie- the international society for optical engineering, 2011, 卷号: 8308, 页码: 83081y
Huang, Wenchao; Xia, Hui; Wang, Shaowei; Deng, Honghai; Wei, Peng; Li, Lu; Liu, Fengqi; Li, Zhifeng; Li, Tianxin
收藏  |  浏览/下载：20/0  |  提交时间：2012/06/14
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY
收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05
Optical and electrical characteristics of GaN vertical light emitting diode with current block layer 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 64007
Guo, Enqing; Liu, Zhiqiang; Wang, Liancheng; Yi, Xiaoyan; Wang, Guohong
收藏  |  浏览/下载：19/0  |  提交时间：2012/06/14
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:  Duan RF
收藏  |  浏览/下载：84/4  |  提交时间：2011/07/05
Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 6, 页码: article no.64320
作者:  Yang T
收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05
Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD 期刊论文
nanotechnology, 2011, 卷号: 22, 期号: 23, 页码: article no.235603
作者:  Song HP
收藏  |  浏览/下载：69/3  |  提交时间：2011/07/05
Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716
作者:  Yin ZG;  Zhang XW;  Tan HR;  Fan YM;  Zhang SG
收藏  |  浏览/下载：42/3  |  提交时间：2011/07/05
Electrical characteristics of a vertical light emitting diode with N-type contacts on a selectively wet-etching roughened surface 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 2, 页码: 24009
Wang, Liancheng; Guo, Enqing; Liu, Zhiqiang; Yi, Xiaoyan; Wang, Guohong
收藏  |  浏览/下载：13/0  |  提交时间：2012/06/14
Theoretical study of polarization-doped GaN-based light-emitting diodes 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: 101110
Zhang, L.; Ding, K.; Liu, N.X.; Wei, T.B.; Ji, X.L.; Ma, P.; Yan, J.C.; Wang, J.X.; Zeng, Y.P.; Li, J.M.
收藏  |  浏览/下载：23/0  |  提交时间：2012/06/14

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