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科研机构
半导体研究所 [17]
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期刊论文 [16]
会议论文 [1]
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2011 [2]
2008 [1]
2007 [1]
2006 [1]
2004 [1]
2003 [2]
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半导体材料 [17]
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Microscopic study on the carrier distribution in optoelectronic device structures: Experiment and modeling
期刊论文
proceedings of spie- the international society for optical engineering, 2011, 卷号: 8308, 页码: 83081y
Huang, Wenchao
;
Xia, Hui
;
Wang, Shaowei
;
Deng, Honghai
;
Wei, Peng
;
Li, Lu
;
Liu, Fengqi
;
Li, Zhifeng
;
Li, Tianxin
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2012/06/14
Capacitance
Carrier concentration
Characterization
Diffusion
Optoelectronic devices
Photodetectors
Scanning
Semiconductor device structures
Semiconductor devices
Semiconductor quantum wells
Thermionic emission
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
收藏
  |  
浏览/下载:66/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition
期刊论文
journal of crystal growth, 2008, 卷号: 310, 期号: 10, 页码: 2508-2513
Zhou ZW
;
Li C
;
Lai HK
;
Chen SY
;
Yu JZ
收藏
  |  
浏览/下载:55/12
  |  
提交时间:2010/03/08
characterization
Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD
期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 281-283
Liu Z (Liu Zhe)
;
Wang XL (Wang Xiaoliang)
;
Wang JX (Wang Junxi)
;
Hu GX (Hu Guoxin)
;
Guo LC (Guo Lunchun)
;
Li JP (Li Jianping)
;
Li JM (Li Jinmin)
;
Zeng YP (Zeng Yiping)
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2010/03/29
characterization
Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy
期刊论文
journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293
Cui LJ (Cui L. J.)
;
Zeng YP (Zeng Y. P.)
;
Wang BQ (Wang B. Q.)
;
Zhu ZP (Zhu Z. P.)
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  |  
浏览/下载:20/0
  |  
提交时间:2010/04/11
characterization
point defects
molecular beam epitaxy
semiconducting gallium compounds
semiconducting indium compounds
semiconducting ternary compounds
1.55 MU-M
QUANTUM-WELLS
TEMPERATURE
GAAS
Influence of Mg content on molecular-beam-epitaxy-grown ZnMgS ultraviolet photodetectors
期刊论文
journal of crystal growth, 2004, 卷号: 265, 期号: 1-2, 页码: 28-33
Lu, LW
;
Sou, IK
;
Ge, WK
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  |  
浏览/下载:327/94
  |  
提交时间:2010/03/09
characterization
Study on variable capacitance diode of (p)nc-Si : H/(n)c-Si heterojunction
期刊论文
vacuum, 2003, 卷号: 71, 期号: 4, 页码: 465-469
Wei WS
;
Wang TM
;
Zhang CX
;
Li GH
;
Li YX
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  |  
浏览/下载:435/4
  |  
提交时间:2010/08/12
nc-Si : H film
(p)nc-Si : H/(n)c-Si heterojunction
variable capacitance diode
NANOCRYSTALLINE SILICON FILMS
ELECTRICAL CHARACTERIZATION
CONDUCTION MECHANISM
SPECTROSCOPY
STATES
Structural and photoluminescent properties of ternary Zn1-xCdxO crystal films grown on Si(111) substrates
期刊论文
journal of crystal growth, 2003, 卷号: 256, 期号: 1-2, 页码: 78-82
Ye ZZ
;
Ma DW
;
He JH
;
Huang JY
;
Zhao BH
;
Luo XD
;
Xu ZY
收藏
  |  
浏览/下载:488/1
  |  
提交时间:2010/08/12
characterization
crystal structure
DC sputtering
alloys
zinc compounds
semiconducting II-VI materials
THIN-FILMS
ROOM-TEMPERATURE
ULTRAVIOLET-LASER
SPRAY-PYROLYSIS
ZNO
MGXZN1-XO
EMISSION
ALLOY
Progress of Si-based nanocrystalline luminescent materials
期刊论文
chinese science bulletin, 2002, 卷号: 47, 期号: 15, 页码: 1233-1242
Peng YC
;
Zhao XW
;
Fu GS
收藏
  |  
浏览/下载:85/0
  |  
提交时间:2010/08/12
Si-based nanomaterials
fabricated method
structural characterization
light emitting mechanism
Si-based photoelectronic devices
CHEMICAL-VAPOR-DEPOSITION
SELF-ASSEMBLING FORMATION
SILICON QUANTUM DOTS
LASER-ABLATION
OPTICAL-ABSORPTION
POROUS SILICON
LIGHT-EMISSION
PHOTOLUMINESCENCE
FABRICATION
OXYGEN
Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy
期刊论文
journal of crystal growth, 2002, 卷号: 234, 期号: 1, 页码: 99-104
Lu LW
;
Fong WK
;
Zhu CF
;
Leung BH
;
Surya C
;
Wang J
;
Ge WK
收藏
  |  
浏览/下载:100/14
  |  
提交时间:2010/08/12
characterization
molecular beam epitaxy
semiconducting materials
STRAIN
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