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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体器件     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency 期刊论文 journal of crystal growth, 2014, 卷号: 395, 页码: 9-13 Dong, P; Yan, JC; Zhang, Y; Wang, JX; Zeng, JP; Geng, C; Cong, PP; Sun, LL; Wei, TB; Zhao, LX; Yan, QF; He, CG; Qin, ZX; Li, JM 收藏  |  浏览/下载：19/0  |  提交时间：2015/03/25 AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency 期刊论文 journal of crystal growth, 2014, 卷号: 395, 页码: 9-13 Dong, P; Yan, JC; Zhang, Y; Wang, JX; Zeng, JP; Geng, C; Cong, PP; Sun, LL; Wei, TB; Zhao, LX; Yan, QF; He, CG; Qin, ZX; Li, JM 收藏  |  浏览/下载：29/0  |  提交时间：2015/03/25 Optical properties of nanopillar AlGaN/GaN MQWs for ultraviolet light-emitting diodes 期刊论文 optics express, 2014, 卷号: 22, 期号: 5, 页码: a320-a327 Dong, P; Yan, JC; Zhang, Y; Wang, JX; Geng, C; Zheng, HY; Wei, XC; Yan, QF; Li, JM 收藏  |  浏览/下载：16/0  |  提交时间：2015/05/11 Influence of AlGaN Electron Blocking Layer on Modulation Bandwidth of GaN-Based Light Emitting Diodes 期刊论文 ecs solid state letters, 2014, 卷号: 3, 期号: 3, 页码: r11-r13 Zhu, SX; Wang, JX; Yan, JC; Zhang, Y; Pei, YR; Si, Z; Yang, H; Zhao, LX; Liu, Z; Li, JM 收藏  |  浏览/下载：18/0  |  提交时间：2015/05/11 Influence of AlGaN Electron Blocking Layer on Modulation Bandwidth of GaN-Based Light Emitting Diodes 期刊论文 ecs solid state letters, 2014, 卷号: 3, 期号: 3, 页码: r11-r13 Zhu, SX; Wang, JX; Yan, JC; Zhang, Y; Pei, YR; Si, Z; Yang, H; Zhao, LX; Liu, Z; Li, JM 收藏  |  浏览/下载：16/0  |  提交时间：2015/05/11