Influence of AlGaN Electron Blocking Layer on Modulation Bandwidth of GaN-Based Light Emitting Diodes

	Influence of AlGaN Electron Blocking Layer on Modulation Bandwidth of GaN-Based Light Emitting Diodes
	Zhu, SX ; Wang, JX ; Yan, JC ; Zhang, Y ; Pei, YR ; Si, Z ; Yang, H ; Zhao, LX ; Liu, Z ; Li, JM
刊名	ecs solid state letters
	2014
卷号	3 期号:3 页码:r11-r13
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2015-05-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26451]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Zhu, SX,Wang, JX,Yan, JC,et al. Influence of AlGaN Electron Blocking Layer on Modulation Bandwidth of GaN-Based Light Emitting Diodes[J]. ecs solid state letters,2014,3(3):r11-r13.
APA	Zhu, SX.,Wang, JX.,Yan, JC.,Zhang, Y.,Pei, YR.,...&Li, JM.(2014).Influence of AlGaN Electron Blocking Layer on Modulation Bandwidth of GaN-Based Light Emitting Diodes.ecs solid state letters,3(3),r11-r13.
MLA	Zhu, SX,et al."Influence of AlGaN Electron Blocking Layer on Modulation Bandwidth of GaN-Based Light Emitting Diodes".ecs solid state letters 3.3(2014):r11-r13.