CORC

浏览/检索结果: 共4条,第1-4条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers 期刊论文
journal of semiconductors, 2010, 卷号: 31, 期号: 2, 页码: 99-102
Zheng Zhongshan; Liu Zhongli; Li Ning; Li Guohua; Zhang Enxia
收藏  |  浏览/下载:17/0  |  提交时间:2011/08/16
Radiation response of partially-depleted MOS transistors fabricated in the fluorinated SIMOX wafers 会议论文
7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004
Li, N; Zhang, GQ; Liu, ZL; Fan, K; Zheng, ZS; Lin, Q; Zhang, ZX; Lin, CL
收藏  |  浏览/下载:127/22  |  提交时间:2010/03/29
Effect of the implantation of fluorine on the mobility of channel electron for partially depleted SOI nMOSFET 会议论文
7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004
Zheng, ZS; Liu, ZL; Zhang, GQ; Li, N; Fan, K
收藏  |  浏览/下载:167/30  |  提交时间:2010/03/29
Influence of fluorine on radiation-induced charge trapping in the SIMOX buried oxides 会议论文
7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004
Zhang, GQ; Liu, ZL; Li, N; Zhen, ZS; Liu, GH; Lin, Q; Zhang, ZX; Lin, CL
收藏  |  浏览/下载:141/31  |  提交时间:2010/03/29


©版权所有 ©2017 CSpace - Powered by CSpace