Radiation response of partially-depleted MOS transistors fabricated in the fluorinated SIMOX wafers

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	Radiation response of partially-depleted MOS transistors fabricated in the fluorinated SIMOX wafers
	Li, N ; Zhang, GQ ; Liu, ZL ; Fan, K ; Zheng, ZS ; Lin, Q ; Zhang, ZX ; Lin, CL
	2004
会议名称	7th international conference on solid-state and integrated circuits technology
会议日期	oct 18-21, 2004
会议地点	beijing, peoples r china
关键词	SIMOX fluorine ionizing radiation
页码	vols 1- 3 proceedings: 851-855
通讯作者	li, n, chinese acad sci, inst semicond, beijing 100083, peoples r china.
中文摘要	ionizing radiation response of partially-depleted mos transistors fabricated in the, fluorinated simox wafers has been investigated. the experimental data show that the, radiation-induced threshold voltage shift of pmosfets and nmosfets, as well as the radiation-induced increase of off-state leakage current of nmosfets can be restrained by implanting fluorine ions into the buried oxide of simox wafers.
英文摘要	ionizing radiation response of partially-depleted mos transistors fabricated in the, fluorinated simox wafers has been investigated. the experimental data show that the, radiation-induced threshold voltage shift of pmosfets and nmosfets, as well as the radiation-induced increase of off-state leakage current of nmosfets can be restrained by implanting fluorine ions into the buried oxide of simox wafers.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:33z (gmt). no. of bitstreams: 1 2429.pdf: 148125 bytes, checksum: dd2621eb4f55fbf1c2e215cc2f4b52af (md5) previous issue date: 2004; chinese inst elect.; ieee beijing sect.; ieee elect devices soc.; ieee eds beijing chapter.; ieee solid-state circuits soc.; ieee sscs beijing chapter.; japan soc appl phys.; iee elect div.; ursi commiss d.; inst elect engineers korea.; natl nat sci fdn china.; beijing municipal bureau ind dev.; peking univ.; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	chinese inst elect.; ieee beijing sect.; ieee elect devices soc.; ieee eds beijing chapter.; ieee solid-state circuits soc.; ieee sscs beijing chapter.; japan soc appl phys.; iee elect div.; ursi commiss d.; inst elect engineers korea.; natl nat sci fdn china.; beijing municipal bureau ind dev.; peking univ.
会议录	2004 7th international conference on solid-state and integrated circuits technology
会议录出版者	ieee ; 345 e 47th st, new york, ny 10017 usa
会议录出版地	345 e 47th st, new york, ny 10017 usa
学科主题	微电子学
语种	英语
ISBN号	0-7803-8511-x
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/10092]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li, N,Zhang, GQ,Liu, ZL,et al. Radiation response of partially-depleted MOS transistors fabricated in the fluorinated SIMOX wafers[C]. 见:7th international conference on solid-state and integrated circuits technology. beijing, peoples r china. oct 18-21, 2004.