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半导体研究所 [166]

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半导体物理 [166]

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限定条件	学科主题：半导体物理

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	Ferromagnetic nature of (Ga, Cr)As epilayers revealed by magnetic circular dichroism 期刊论文 solid state communications, 2011, 卷号: 151, 期号: 6, 页码: 456-459 Wu H; Gan HD; Zheng HZ; Lu J; Zhu H; Ji Y; Li GR; Zhao JH 收藏 \| 浏览/下载：64/5 \| 提交时间：2011/07/05 Magnetic semiconductors Molecular beam epitaxy Magneto-optical effects TRANSPORT-PROPERTIES SEMICONDUCTOR (GA,CR)AS
	Molecular beam epitaxy growth of GaAs on an offcut Ge substrate 期刊论文 chinese physics b, 2011, 卷号: 20, 期号: 1, 页码: article no.18102 作者: Li MF 收藏 \| 浏览/下载：106/7 \| 提交时间：2011/07/05 molecular beam epitaxy anti-phase domain GaAs/Ge interface CHEMICAL VAPOR-DEPOSITION JUNCTION SOLAR-CELLS DOMAIN-FREE GROWTH TEMPERATURE QUALITY FUTURE
	Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110) 期刊论文 nanoscale research letters, 2011, 卷号: 6, 页码: article no.125 作者: Chen L 收藏 \| 浏览/下载：36/1 \| 提交时间：2011/07/05 MAGNETIC-PROPERTIES GAAS(001) FILMS ORDER NANOCLUSTERS EPITAXY
	Photoluminescence of CdSe nanowires grown with and without metal catalyst 期刊论文 nano research, 2011, 卷号: 4, 期号: 4, 页码: 343-359 作者: Tan PH 收藏 \| 浏览/下载：52/5 \| 提交时间：2011/07/05 CdSe nanowires photoluminescence CHEMICAL-VAPOR-DEPOSITION SHAPE-SELECTIVE SYNTHESIS LIQUID-SOLID MECHANISM OPTICAL-PROPERTIES SILICON NANOWIRES SI NANOWIRES ZNSE NANOWIRES SEMICONDUCTOR NANOCRYSTALS STRUCTURAL-PROPERTIES EPITAXIAL-GROWTH
	Hole mediated magnetism in Mn-doped GaN nanowires 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.74313 作者: Li JB 收藏 \| 浏览/下载：62/4 \| 提交时间：2011/07/05 MOLECULAR-BEAM EPITAXY ROOM-TEMPERATURE QUANTUM WIRES SEMICONDUCTORS FERROMAGNETISM FIELD GAMNN
	Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文 journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43004 He, Jifang; Shang, Xiangjun; Li, Mifeng; Zhu, Yan; Chang, Xiuying; Ni, Haiqiao; Xu, Yingqiang; Niu, Zhichuan 收藏 \| 浏览/下载：73/0 \| 提交时间：2012/06/14 Atomic force microscopy Buffer layers Epitaxial growth Gallium alloys Gallium arsenide Germanium Growth temperature High resolution transmission electron microscopy Molecular beam epitaxy Molecular beams Semiconducting gallium Semiconductor device structures Semiconductor quantum wells
	Preparation and photoluminescence study of patterned substrate quantum wires 期刊论文 acta physica sinica, 2011, 卷号: 60, 期号: 2, 页码: article no.20703 作者: Yang XH; He JF 收藏 \| 浏览/下载：57/7 \| 提交时间：2011/07/05 V-groove substrate quantum wires GaAs EPITAXIAL-GROWTH TRANSISTOR
	2-5m InAs/GaSb superlattices infrared photodetector 期刊论文 hongwai yu jiguang gongcheng/infrared and laser engineering, 2011, 卷号: 40, 期号: 8, 页码: 1403-1406 Xu, Yingqiang; Tang, Bao; Wang, Guowei; Ren, Zhengwei; Niu, Zhichuan 收藏 \| 浏览/下载：20/0 \| 提交时间：2012/06/14 Alignment Atomic force microscopy Atomic spectroscopy Detectors Epitaxial growth Gallium alloys Gallium arsenide Indium arsenide Infrared detectors Molecular beam epitaxy Molecular beams Optoelectronic devices Semiconducting gallium Superlattices Transmission electron microscopy X ray diffraction
	First principles study of the electronic properties of twinned SiC nanowires 期刊论文 journal of nanoparticle research, 2011, 卷号: 13, 期号: 1, 页码: 185-191 作者: Li JB 收藏 \| 浏览/下载：100/6 \| 提交时间：2011/07/05 Twinned SiC nanowires Electronic properties Ab initio Modeling and simulation SILICON-CARBIDE NANOWIRES FIELD-EMISSION PROPERTIES MOLECULAR-BEAM EPITAXY INAS NANOWIRES GROWTH NANOTUBES NITRIDE DIFFUSION NANORODS ENERGY
	Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy 期刊论文 optoelectronics letters, 2011, 卷号: 7, 期号: 5, 页码: 325-329 Zhu, Yan; Ni, Hai-qiao; Wang, Hai-li; He, Ji-fang; Li, Mi-feng; Shang, Xiang-jun; Niu, Zhi-chuan 收藏 \| 浏览/下载：12/0 \| 提交时间：2012/06/14 Epitaxial growth Gallium arsenide Growth(materials) Molecular beam epitaxy Semiconducting gallium Semiconducting indium Semiconductor quantum wells

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