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The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083513
Zhou GY (Zhou G. Y.); Chen YH (Chen Y. H.); Tang CG (Tang C. G.); Liang LY (Liang L. Y.); Jin P (Jin P.); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载：13/0  |  提交时间：2010/12/05
First and second order Raman scattering spectroscopy of nonpolar a-plane GaN 期刊论文
journal of applied physics, 2007, 卷号: 101, 期号: 10, 页码: art.no.103533
Gao HY (Gao Haiyong); Yan FW (Yan Fawang); Zhang HX (Zhang Huixiao); Li JM (Li Jinmin); Wang JX (Wang Junxi); Yan JC (Yan Jianchang)
收藏  |  浏览/下载：129/0  |  提交时间：2010/03/29
Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots 期刊论文
chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1315-1319
Zhou WM; Wang CY; Chen YH; Wang ZG
收藏  |  浏览/下载：47/0  |  提交时间：2010/04/11
Biaxial stress dependence of the electrostimulated near-band-gap spectrum of GaN epitaxial film grown on (0001) sapphire substrate 期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 25, 页码: art.no.251910
Wan KS (Wan Keshu); Porporati AA (Porporati Alessandro Alan); Feng G (Feng Gan); Yang H (Yang Hui); Pezzotti G (Pezzotti Giuseppe)
收藏  |  浏览/下载：41/0  |  提交时间：2010/04/11
Raman study on self-assembled InAs/InAlAs/InP(001) quantum wires 期刊论文
nanotechnology, 2005, 卷号: 16, 期号: 9, 页码: 1974-1977
作者:  Ye XL;  Xu B
收藏  |  浏览/下载：121/35  |  提交时间：2010/03/17
Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate 期刊论文
journal of crystal growth, 2003, 卷号: 254, 期号: 3-4, 页码: 348-352
作者:  Zhang SM
收藏  |  浏览/下载：230/30  |  提交时间：2010/08/12
Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD 期刊论文
journal of crystal growth, 2002, 卷号: 242, 期号: 1-2, 页码: 124-128
Zheng XH; Feng ZH; Wang YT; Zheng WL; Jia QJ; Jiang XM; Yang H; Liang JW
收藏  |  浏览/下载：125/0  |  提交时间：2010/08/12

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