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科研机构
半导体研究所 [50]
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期刊论文 [43]
会议论文 [7]
发表日期
2012 [1]
2011 [5]
2010 [2]
2009 [2]
2008 [1]
2007 [2]
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半导体材料 [50]
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Protection effect of a SiO2 layer in Al0.85Ga 0.15As wet oxidation
期刊论文
journal of semiconductors, 2012, 卷号: 33, 期号: 10, 页码: 102002
Zhou, Wenfei
;
Ye, Xiaoling
;
Xu, Bo
;
Zhang, Shizhu
;
Wang, Zhanguo
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2013/04/19
Fabrication and property investigation of the highly ordered TiO2 nanotube arrays
期刊论文
gao xiao hua xue gong cheng xue bao/journal of chemical engineering of chinese universities, 2011, 卷号: 25, 期号: 3, 页码: 507-512
Lan, Yu-Wei
;
Zhou, Li-Ya
;
Tong, Zhang-Fa
;
Pang, Qi
;
Leng, Li-Min
;
Han, Jian-Peng
;
Wang, Fan
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2012/06/14
Anodic oxidation
Azo dyes
Degradation
Ethylene
Ethylene glycol
Fabrication
Mercury(metal)
Photocatalysis
Photodegradation
Scanning electron microscopy
Titanium
Titanium dioxide
X ray diffraction
X ray diffraction analysis
Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition
期刊论文
rare metals, 2011, 卷号: 30, 期号: 3, 页码: 247-251
作者:
Li GK
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  |  
浏览/下载:74/2
  |  
提交时间:2011/07/05
vanadium dioxide
infrared transition
diffraction effect
dual ion beam sputtering
annealing
The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure
期刊论文
european physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 10102
Bi Y
;
Wang XL
;
Xiao HL
;
Wang CM
;
Peng EC
;
Lin DF
;
Feng C
;
Jiang LJ
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2012/01/06
ALGAN/GAN/INGAN/GAN DH-HEMTS
FIELD-EFFECT TRANSISTORS
ALGAN/GAN
POLARIZATION
PASSIVATION
HFETS
GHZ
Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions
期刊论文
applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 1, 页码: 429-432
作者:
Zhang ML
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  |  
浏览/下载:65/4
  |  
提交时间:2011/07/07
GaN
Ferromagnetic
Implantation
Annealing
The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure
期刊论文
applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
作者:
Bi Y
;
Lin DF
;
Peng EC
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  |  
浏览/下载:19/0
  |  
提交时间:2011/09/14
2-DIMENSIONAL ELECTRON-GAS
ALGAN/GAN/INGAN/GAN DH-HEMTS
MILLIMETER-WAVE APPLICATIONS
FIELD-EFFECT TRANSISTORS
HETEROJUNCTION FETS
HETEROSTRUCTURES
PASSIVATION
CONFINEMENT
PERFORMANCE
BARRIERS
Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis
期刊论文
science china-technological sciences, 2010, 卷号: 53, 期号: 11, 页码: 3002-3005
Huang TM (Huang TianMao)
;
Chen NF (Chen NuoFu)
;
Zhang XW (Zhang XingWang)
;
Bai YM (BaiYiMing)
;
Yin ZG (Yin ZhiGang)
;
Shi HW (Shi HuiWei)
;
Zhang H (Zhang Han)
;
Wang Y (Wang Yu)
;
Wang YS (Wang YanShuo)
;
Yang XL (Yang XiaoLi)
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2010/11/14
polycrystalline silicon thin film
aluminum induced crystallization
(111) preferred orientation
INDUCED LAYER-EXCHANGE
AMORPHOUS-SILICON
SOLAR-CELLS
GLASS
SI
ORIENTATION
MODEL
Magnetic Properties of FePt Nanoparticles Prepared by a Micellar Method
期刊论文
nanoscale research letters, 2010, 卷号: 5, 期号: 1, 页码: 1-6
作者:
You JB
;
Zhang XW
;
Yin ZG
收藏
  |  
浏览/下载:203/39
  |  
提交时间:2010/04/04
FePt nanoparticles
Reverse micelles
Self-assembly
Interparticle exchange coupling
Magnetic recording
FILMS
ANISOTROPY
FUTURE
LIMITS
MEDIA
Strong room-temperature ferromagnetism in Cu-implanted nonpolar GaN films
期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 11, 页码: art. no. 113921
Sun LL
;
Yan FW
;
Zhang HX
;
Wang JX
;
Zeng YP
;
Wang GH
;
Li JM
收藏
  |  
浏览/下载:99/0
  |  
提交时间:2010/04/03
annealing
Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method
期刊论文
journal of crystal growth, 2009, 卷号: 311, 期号: 7, 页码: 1723-1727
Zhao H
;
Wang SM
;
Zhao QX
;
Sadeghi M
;
Larsson A
收藏
  |  
浏览/下载:180/35
  |  
提交时间:2010/03/08
Quantum well
Dilute nitride
Rapid thermal annealing
InGaAs
GaInNAs
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