Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions | |
Zhang ML | |
刊名 | applied physics a-materials science & processing |
2011 | |
卷号 | 104期号:1页码:429-432 |
关键词 | GaN Ferromagnetic Implantation Annealing |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2011-07-07 ; 2011-07-15 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/21394] |
专题 | 半导体研究所_半导体材料科学中心 |
推荐引用方式 GB/T 7714 | Zhang ML. Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions[J]. applied physics a-materials science & processing,2011,104(1):429-432. |
APA | Zhang ML.(2011).Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions.applied physics a-materials science & processing,104(1),429-432. |
MLA | Zhang ML."Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions".applied physics a-materials science & processing 104.1(2011):429-432. |
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