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| Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures 期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 2, 页码: 23705
Liu GP; Wu J; Lu YW; Li ZW; Song YF; Li CM; Yang SY; Liu XL; Zhu QS; Wang ZG
  收藏 | 浏览/下载：23/0 | 提交时间：2012/02/06
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| An investigation on InxGa1-xN/GaN multiple quantum well solar cells 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 26, 页码: art. no. 265103
作者: Yin HB ; Lin DF; Hou QF; Deng QW
收藏 | 浏览/下载：36/2 | 提交时间：2011/07/07
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| An investigation on In(x)Ga(1-x)N/GaN multiple quantum well solar cells 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 26, 页码: 265103
Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Hou QF; Lin DF; Li JM; Wang ZG; Hou X
收藏 | 浏览/下载：12/0 | 提交时间：2012/01/06
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| Intrinsically limited critical temperatures of highly doped Ga1-xMnxAs thin films 期刊论文
physical review b, 2010, 卷号: 81, 期号: 23, 页码: art. no. 235201
Khazen K (Khazen Kh.); von Bardeleben HJ (von Bardeleben H. J.); Cantin JL (Cantin J. L.); Mauger A (Mauger A.); Chen L (Chen L.); Zhao JH (Zhao J. H.)
收藏 | 浏览/下载：18/0 | 提交时间：2010/06/18
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| Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis 期刊论文
science china-technological sciences, 2010, 卷号: 53, 期号: 11, 页码: 3002-3005
Huang TM (Huang TianMao); Chen NF (Chen NuoFu); Zhang XW (Zhang XingWang); Bai YM (BaiYiMing); Yin ZG (Yin ZhiGang); Shi HW (Shi HuiWei); Zhang H (Zhang Han); Wang Y (Wang Yu); Wang YS (Wang YanShuo); Yang XL (Yang XiaoLi)
收藏 | 浏览/下载：25/0 | 提交时间：2010/11/14
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| Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density 期刊论文
journal of physics d-applied physics, 2010, 卷号: 43, 期号: 29, 页码: art. no. 295401
Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Liu JQ (Liu J. Q.); Jia CH (Jia C. H.); Zhou GY (Zhou G. Y.); Ye XL (Ye X. L.); Xu B (Xu Bo); Wang ZG (Wang Z. G.)
收藏 | 浏览/下载：336/26 | 提交时间：2010/08/17
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| The influence of internal electric fields on the transition energy of InGaN/gaN quantum well 期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 522-526
Guo LC (Guo Lunchun); Wang XL (Wang Xiaoliang); Xiao HL (Xiao Hongling); Wang BZ (Wang Baozhu)
收藏 | 浏览/下载：64/0 | 提交时间：2010/03/29
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| Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well 期刊论文
journal of crystal growth, 2006, 卷号: 287, 期号: 1, 页码: 28-33
Fan WJ; Abiyasa AP; Tan ST; Yu SF; Sun XW; Xia JB; Yeo YC; Li MF; Chong TC
收藏 | 浏览/下载：99/0 | 提交时间：2010/04/11
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| Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth 会议论文
iumrs/icem 2002 conference, xian, peoples r china, jun 10-14, 2002
Zhang ZC; Ren BY; Chen YH; Yang SY; Wang ZG
收藏 | 浏览/下载：25/0 | 提交时间：2010/11/15
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| A geometrical model of GaN morphology in initial growth stage 期刊论文
journal of crystal growth, 2002, 卷号: 234, 期号: 1, 页码: 115-120
作者: Han PD
收藏 | 浏览/下载：78/8 | 提交时间：2010/08/12
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