An investigation on InxGa1-xN/GaN multiple quantum well solar cells

	An investigation on InxGa1-xN/GaN multiple quantum well solar cells
	Yin HB; Lin DF; Hou QF; Deng QW
刊名	journal of physics d-applied physics
	2011
卷号	44 期号:26 页码:art. no. 265103
关键词	FUNDAMENTAL-BAND GAP PHASE-SEPARATION EFFICIENCY INN EMISSION LAYERS MODEL
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2011-07-07 ; 2011-07-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21402]
专题	半导体研究所_半导体材料科学中心
推荐引用方式 GB/T 7714	Yin HB,Lin DF,Hou QF,et al. An investigation on InxGa1-xN/GaN multiple quantum well solar cells[J]. journal of physics d-applied physics,2011,44(26):art. no. 265103.
APA	Yin HB,Lin DF,Hou QF,&Deng QW.(2011).An investigation on InxGa1-xN/GaN multiple quantum well solar cells.journal of physics d-applied physics,44(26),art. no. 265103.
MLA	Yin HB,et al."An investigation on InxGa1-xN/GaN multiple quantum well solar cells".journal of physics d-applied physics 44.26(2011):art. no. 265103.