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科研机构
半导体研究所 [16]
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期刊论文 [10]
会议论文 [6]
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2011 [1]
2010 [1]
2008 [2]
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2002 [3]
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半导体材料 [16]
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High-power quantum dot superluminescent diode with integrated optical amplifier section
期刊论文
electronics letters, 2011, 卷号: 47, 期号: 21, 页码: 1191-
Wang, ZC
;
Jin, P
;
Lv, XQ
;
Li, XK
;
Wang, ZG
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2012/02/06
LIGHT-EMITTING-DIODES
SPECTRUM
Characterization and analysis of two-dimensional GaAs-based photonic crystal nanocavities at room temperature
期刊论文
microelectronic engineering, 2010, 卷号: 87, 期号: 10, 页码: 1834-1837
Peng YS (Peng Y. S.)
;
Xu B (Xu B.)
;
Ye XL (Ye X. L.)
;
Niu JB (Niu J. B.)
;
Jia R (Jia R.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:106/27
  |  
提交时间:2010/08/17
Photonic crystal nanocavities
Quantum dots
Cavity resonant mode
Room temperature
Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy
会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
作者:
Xu B
;
Jin P
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2010/03/09
INAS
Simulation and fabrication of the SiC-based clamped-clamped filter
会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Zhao, YM
;
Ning, J
;
Sun, GS
;
Liu, XF
;
Wang, L
;
Ji, G
;
Wang, L
;
Zhao, WS
;
Li, JM
;
Yang, FH
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2010/03/09
MICROMECHANICAL RESONATORS
FREQUENCY
Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition
期刊论文
journal of crystal growth, 2005, 卷号: 279, 期号: 3-4, 页码: 335-340
作者:
Li DB
;
Wei HY
;
Han XX
收藏
  |  
浏览/下载:59/22
  |  
提交时间:2010/03/17
cracks
High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers
期刊论文
journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 354-358
作者:
Zhao DG
收藏
  |  
浏览/下载:61/0
  |  
提交时间:2010/08/12
X-ray diffraction
metalorganic vapor phase epitaxy
nitrides
semiconducting III-V materials
BUFFER LAYER
GAN
GROWTH
X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(001) substrates
期刊论文
journal of crystal growth, 2003, 卷号: 254, 期号: 1-2, 页码: 23-27
Shen XM
;
Wang YT
;
Zheng XH
;
Zhang BS
;
Chen J
;
Feng G
;
Yang H
收藏
  |  
浏览/下载:111/0
  |  
提交时间:2010/08/12
buffer layers
x-ray diffraction
metalorganic chemical vapor deposition
nitrides
VAPOR-PHASE EPITAXY
NUCLEATION LAYERS
CUBIC GAN
(001)GAAS SUBSTRATE
STRAIN RELAXATION
TEMPERATURE
DEPOSITION
QUALITY
DIODES
A novel application to quantum dot materials to the active region of superluminescent diodes
期刊论文
journal of crystal growth, 2002, 卷号: 243, 期号: 1, 页码: 25-29
作者:
Li CM
;
Xu B
;
Jin P
;
Ye XL
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2010/08/12
atomic force microscopy
low dimensional structures
quantum dots
strain
molecular beam epitaxy
superluminescent diodes
1.3 MU-M
HIGH-POWER
INTEGRATED ABSORBER
INAS ISLANDS
SPECTRUM
WINDOW
LAYER
SIZE
Thermodynamics and kinetics analysis of in-situ synthesizing AlN
期刊论文
science in china series e-technological sciences, 2002, 卷号: 45, 期号: 3, 页码: 249-254
Zheng XH
;
Wang Q
;
Zhou ML
;
Li CG
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/08/12
Al-Mg alloy
in-situ synthesis
AlN
Mg
thermo-dynamical
dynamics
THERMAL-CONDUCTIVITY
ALUMINUM NITRIDE
HETEROSTRUCTURE
Silicon: the promising material for phontonic integrated circuits platform
会议论文
6th world multi-conference on systemics, cybernetics and informatics (sci 2002)/8th international conference on information systems analysis and synthesis (isas 2002), orlando, fl, jul 14-18, 2002
Yan QF
;
Yu JZ
;
Liu ZL
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/10/29
silicon
photonic integration
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