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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The fabrication of GaN-based nanopillar light-emitting diodes 期刊论文 journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 074302 Zhu JH (Zhu Jihong); Wang LJ (Wang Liangji); Zhang SM (Zhang Shuming); Wang H (Wang Hui); Zhao DG (Zhao Degang); Zhu JJ (Zhu Jianjun); Liu ZS (Liu Zongshun); Jiang DS (Jiang Desheng); Yang H (Yang Hui) 收藏  |  浏览/下载：35/0  |  提交时间：2010/11/14 MASKS  NI   High-temperature AlN interlayer for crack-free AlGaN growth on GaN 期刊论文 journal of applied physics, 2008, 卷号: 104, 期号: 4, 页码: art. no. 043516 Sun, Q; Wang, JT; Wang, H; Jin, RQ; Jiang, DS; Zhu, JJ; Zhao, DG; Yang, H; Zhou, SQ; Wu, MF; Smeets, D; Vantomme, A 收藏  |  浏览/下载：73/0  |  提交时间：2010/03/08 STRESS  SI(111)  REDUCTION  THICKNESS   Influence of AlN thickness on strain evolution of GaN layer grown on high-temperature AlN interlayer 期刊论文 journal of physics d-applied physics, 2007, 卷号: 40, 期号: 17, 页码: 5252-5255 Liu, W (Liu, W.); Wang, JF (Wang, J. F.); Zhu, JJ (Zhu, J. J.); Jiang, DS (Jiang, D. S.); Yang, H (Yang, H.) 收藏  |  浏览/下载：56/0  |  提交时间：2010/03/29 STRESS   Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes 期刊论文 journal of applied physics, 2006, 卷号: 100, 期号: 4, 页码: art.no.046101 Li DY (Li D. Y.); Huang YZ (Huang Y. Z.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Ye XJ (Ye X. J.); Chong M (Chong M.); Chen LH (Chen L. H.); Yang H (Yang H.); Liang JW (Liang J. W.) 收藏  |  浏览/下载：45/0  |  提交时间：2010/04/11 LINEWIDTH ENHANCEMENT FACTOR  WAVE-GUIDE LASER  GAN SUBSTRATE  INDEX  TEMPERATURE  GAIN   Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594 Wang JF (Wang Jian-Feng); Zhang BS (Zhang Bao-Shun); Zhang JC (Zhang Ji-Cai); Zhu JJ (Zhu Jian-Jun); Wang YT (Wang Yu-Tian); Chen J (Chen Jun); Liu W (Liu Wei); Jiang DS (Jiang De-Sheng); Yao DZ (Yao Duan-Zheng); Yang H (Yang Hui) 收藏  |  浏览/下载：29/0  |  提交时间：2010/04/11 CHEMICAL-VAPOR-DEPOSITION  HIGH-QUALITY GAN  ALN BUFFER LAYER  NUCLEATION LAYER  PHASE EPITAXY  EVOLUTION  DENSITY  SILICON  STRESS  SI   Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics 期刊论文 半导体学报, 2006, 卷号: 27, 期号: 3, 页码: 499-505 作者:  Chen Lianghui;  Zhao Degang;  Zhu Jianjun;  Zhang Shuming 收藏  |  浏览/下载：17/0  |  提交时间：2010/11/23 Strain analysis of InP/InGaAsP wafer bonded on Si by X-ray double crystalline diffraction 期刊论文 materials science and engineering b-solid state materials for advanced technology, 2006, 卷号: 133, 期号: 1-3, 页码: 117-123 Zhao HQ (Zhao Hong-Quan); Yu LJ (Yu Li-Juan); Huang YZ (Huang Yong-Zhen); Wang YT (Wang Yu-Tian) 收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11 InP  Si  X-ray double crystalline diffraction  thermal strain  wafer bonding  OPTOELECTRONIC DEVICES  EPITAXIAL OVERGROWTHS  TEMPERATURE  INTERFACE  STRESSES  VCSELS  SURFACES  ENERGY   Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers 期刊论文 applied physics letters, 2006, 卷号: 88, 期号: 4, 页码: art.no.041903 作者:  Zhao DG 收藏  |  浏览/下载：38/0  |  提交时间：2010/04/11 PHOTOLUMINESCENCE  LUMINESCENCE   Stress analysis of silica-based arrayed waveguide grating by a finite element method 会议论文 photonics asia symposium 2002, shanghai, peoples r china, oct 14-18, 2002 Deng XQ; Yang QQ; Wang HJ; Hu XW; Wang QM 收藏  |  浏览/下载：18/0  |  提交时间：2010/10/29 finite element method  stress  silica optical waveguide on silicon  birefringence  OPTICAL WAVE-GUIDES  DIFFERENCE METHOD