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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 发表日期：2008    学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Theoretical design and performance of InxGa1-xN two-junction solar cells 期刊论文 journal of physics d-applied physics, 2008, 卷号: 41, 期号: 24, 页码: art. no. 245104 Zhang, XB; Wang, XL; Xiao, HL; Yang, CB; Ran, JX; Wang, CM; Hou, QF; Li, JM; Wang, ZG 收藏  |  浏览/下载：29/2  |  提交时间：2010/03/08 IN1-XGAXN ALLOYS  BAND-GAP  IRRADIANCE  SINGLE  INN   Dislocation scattering in AlxGa1-xN/GaN heterostructures 期刊论文 applied physics letters, 2008, 卷号: 93, 期号: 18, 页码: art. no. 182111 Xu, XQ; Liu, XL; Han, XX; Yuan, HR; Wang, J; Guo, Y; Song, HP; Zheng, GL; Wei, HY; Yang, SY; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：61/0  |  提交时间：2010/03/08 aluminium compounds  dislocation density  electron mobility  gallium compounds  III-V semiconductors  interface roughness  semiconductor heterojunctions  two-dimensional electron gas  wide band gap semiconductors   Neutron irradiation effect in two-dimensional electron gas of AlGaN/GaN heterostructures 期刊论文 chinese physics letters, 2008, 卷号: 25, 期号: 3, 页码: 1045-1048 Zhang, ML; Wang, XL; Xiao, HL; Wang, CM; Ran, JX; Hu, GX 收藏  |  浏览/下载：50/3  |  提交时间：2010/03/08 TRANSPORT  PROTON  HEMTS   Valence band offset of MgO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2008, 卷号: 93, 期号: 7, 页码: art. no. 072110 作者:  Wei HY 收藏  |  浏览/下载：83/0  |  提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY   Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia 期刊论文 chinese physics letters, 2008, 卷号: 25, 期号: 11, 页码: 4097-4100 Lin, GQ; Zeng, YP; Wang, XL; Liu, HX 收藏  |  浏览/下载：19/0  |  提交时间：2010/03/08 RHEED  INTERLAYER  PRESSURE  NITRIDES  LAYERS  MBE   Band alignment of InN/GaAs heterojunction determined by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2008, 卷号: 93, 期号: 12, 页码: art. no. 122111 Zhang, RQ; Guo, Y; Song, HP; Liu, XL; Yang, SY; Wei, HY; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：20/0  |  提交时间：2010/03/08 PHOTOEMISSION SPECTROSCOPY  GAP STATES  CONTINUUM  LINEUPS  INN   Characterization of ZnMgO hexagonal-nanotowers/films on m-plane sapphire synthesized by metal organic chemical vapour deposition 期刊论文 journal of physics d-applied physics, 2008, 卷号: 41, 期号: 20, 页码: art. no. 205416 Yang, AL; Wei, HY; Liu, XL; Song, HP; Fan, HB; Zhang, PF; Zheng, GL; Yang, SY; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：58/0  |  提交时间：2010/03/08 LOW-TEMPERATURE GROWTH  OPTICAL-PROPERTIES  ZNO NANOWIRES  THIN-FILMS  NANORODS  MGXZN1-XO  ZINC   The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD 期刊论文 superlattices and microstructures, 2008, 卷号: 44, 期号: 2, 页码: 153-159 Luo, WJ; Wang, XL; Guo, LC; Xiao, HL; Wang, CM; Ran, JX; Li, JP; Li, JM 收藏  |  浏览/下载：84/1  |  提交时间：2010/03/08 gallium nitride crack  low temperature aluminum nitride  interlayer  silicon