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Molecular beam epitaxial growth of GaN on 3c-SiC/Si(111) substrates using a thick AIN buffer layer 会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
Gao, X; Li, JM; Sun, GS; Zhang, NH; Wang, L; Zhao, WS; Zeng, YP
收藏  |  浏览/下载:135/48  |  提交时间:2010/03/29
SI(111)  ALN  


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