Molecular beam epitaxial growth of GaN on 3c-SiC/Si(111) substrates using a thick AIN buffer layer

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	Molecular beam epitaxial growth of GaN on 3c-SiC/Si(111) substrates using a thick AIN buffer layer
	Gao, X ; Li, JM ; Sun, GS ; Zhang, NH ; Wang, L ; Zhao, WS ; Zeng, YP
	2004
会议名称	13th international conference on semiconducting and insulating materials (simc xiii)
会议日期	sep 20-25, 2004
会议地点	beijing, peoples r china
关键词	SI(111) ALN
页码	49-52
通讯作者	gao, x, chinese acad sci, inst semicond, novel semicond mat lab, beijing 100083, peoples r china.
中文摘要	hexagonal gan films (similar to 3 mu m) were grown on 3c-sic/si(111) and carbonized si(111) substrates using a thick aln buffer cracks are observed on the surface of the gan film grown on the carbonized si(111), while no cracks are visible on the 3c-sic/si(111). xrd exhibits polycrystalline nature of the gan film grown on the carbonized si(111) due to poorer crystalline quality of this substrate. raman spectra reveal that all gan layers are under tensile stress, and the gan layer grown on 3c-sic/si(111) shows a very low stress value of sigma(xx) = 0.65 gpa. in low-temperature photoluminescence spectra the remarkable donor-acceptor-pair recombination and yellow band can be attributed to the incorporation of si impurities from the decomposition of sic.
英文摘要	hexagonal gan films (similar to 3 mu m) were grown on 3c-sic/si(111) and carbonized si(111) substrates using a thick aln buffer cracks are observed on the surface of the gan film grown on the carbonized si(111), while no cracks are visible on the 3c-sic/si(111). xrd exhibits polycrystalline nature of the gan film grown on the carbonized si(111) due to poorer crystalline quality of this substrate. raman spectra reveal that all gan layers are under tensile stress, and the gan layer grown on 3c-sic/si(111) shows a very low stress value of sigma(xx) = 0.65 gpa. in low-temperature photoluminescence spectra the remarkable donor-acceptor-pair recombination and yellow band can be attributed to the incorporation of si impurities from the decomposition of sic.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:16z (gmt). no. of bitstreams: 1 2338.pdf: 1201082 bytes, checksum: b134723c670feb043e809017c5821a67 (md5) previous issue date: 2004; ieee electron devices soc.; chinese acad sci.; natl nat sci fdn china.; hakuto co ltd.; shenzhen oceans king investment imp & exp co.; shenzhen refond opt ele co ltd.; jiangsu nata optoelect mat co ltd.; beijing univ technol.; gen res inst nnferrous mat.; nanjing univ.; shanghai inst microsyst & informat technol.; sun yat univ.; shanghai inst microsyst & informat technol.; sun yat univ.; zhejiang univ.; chinese acad sci, inst semicond, novel semicond mat lab, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	ieee electron devices soc.; chinese acad sci.; natl nat sci fdn china.; hakuto co ltd.; shenzhen oceans king investment imp & exp co.; shenzhen refond opt ele co ltd.; jiangsu nata optoelect mat co ltd.; beijing univ technol.; gen res inst nnferrous mat.; nanjing univ.; shanghai inst microsyst & informat technol.; sun yat univ.; shanghai inst microsyst & informat technol.; sun yat univ.; zhejiang univ.
会议录	smic-xiii 2004 13th international conference on semiconducting & insulating materials
会议录出版者	ieee ; 345 e 47th st, new york, ny 10017 usa
会议录出版地	345 e 47th st, new york, ny 10017 usa
学科主题	半导体材料
语种	英语
ISBN号	0-7803-8668-x
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/9912]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Gao, X,Li, JM,Sun, GS,et al. Molecular beam epitaxial growth of GaN on 3c-SiC/Si(111) substrates using a thick AIN buffer layer[C]. 见:13th international conference on semiconducting and insulating materials (simc xiii). beijing, peoples r china. sep 20-25, 2004.