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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 发表日期：2002     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Linear cofactor difference method of MOSFET subthreshold characteristics for extracting interface traps induced by gate oxide stress test 期刊论文 ieee电子器件汇刊, 2002 He, J; Zhang, X; Huang, R; Wang, YY 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/10 electrical stress effect  interface traps  linear cofactor difference operator  MOSFET  DENSITY   Improvement of luminescence efficiency by electrical annealing in single-layer organic light-emitting diodes based on a conjugated dendrimer 期刊论文 journal of physics d-applied physics, 2002, 卷号: 35, 期号: 6, 页码: 520-523 Ma DG; Lupton JM; Beavington R; Burn PL; Samuel IDW 收藏  |  浏览/下载：145/32  |  提交时间：2010/11/03 ELECTROLUMINESCENT DEVICES  POLYMER MORPHOLOGY  FILM MORPHOLOGY  PERFORMANCE  STABILITY   Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers 会议论文 9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001 Zhao YW; Sun NF; Dong HW; Jiao JH; Zhao JQ; Sun TN; Lin LY 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 indium phosphide  semi-insulating  annealing  PICTS  photoluminescence  SEMIINSULATING INP  INDIUM-PHOSPHIDE  FE  PHOTOLUMINESCENCE  TEMPERATURE   Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers 期刊论文 materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 期号: 0, 页码: 521-524 Zhao YW; Sun NF; Dong HW; Jiao JH; Zhao JQ; Sun TN; Lin LY 收藏  |  浏览/下载：82/19  |  提交时间：2010/08/12 indium phosphide  semi-insulating  annealing  PICTS  photoluminescence  SEMIINSULATING INP  INDIUM-PHOSPHIDE  FE  PHOTOLUMINESCENCE  TEMPERATURE   Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance 期刊论文 journal of applied physics, 2002, 卷号: 92, 期号: 4, 页码: 1968-1970 Dong HW; Zhao YW; Zhang YH; Jiao JH; Zhao JQ; Lin LY 收藏  |  浏览/下载：63/15  |  提交时间：2010/08/12 FE-DOPED INP  SEMIINSULATING INP  UNDOPED INP  SPECTROSCOPY  WAFER  UNIFORMITY  PRESSURE  TRAPS