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Two-dimensional ordering of self-assembled inxgal-xas quantum dots grown on gaas(311)b surfaces 期刊论文
Journal of crystal growth, 1999, 卷号: 206, 期号: 4, 页码: 279-286
作者:  Xu, HZ;  Jiang, WH;  Xu, B;  Zhou, W;  Wang, ZG
收藏  |  浏览/下载:32/0  |  提交时间:2019/05/12
Effect of si overgrowth on the structural and luminescence properties of ge islands on si(100) 期刊论文
Journal of crystal growth, 1999, 卷号: 207, 期号: 1-2, 页码: 150-153
作者:  Liu, JP;  Wang, JZ;  Huang, DD;  Li, JP;  Sun, DZ
收藏  |  浏览/下载:9/0  |  提交时间:2019/05/12
Effect of Si overgrowth on the structural and luminescence properties of Ge islands on Si(100) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1999, 卷号: 207, 期号: 1-2, 页码: 150-153
作者:  Liu, JP;  Wang, JZ;  Huang, DD;  Li, JP;  Sun, DZ
收藏  |  浏览/下载:11/0  |  提交时间:2021/02/02
Effect of si doping on cubic gan films grown on gaas(100) 期刊论文
Journal of crystal growth, 1999, 卷号: 206, 期号: 1-2, 页码: 150-154
作者:  Xu, DP;  Yang, H;  Li, JB;  Li, SF;  Wang, YT
收藏  |  浏览/下载:10/0  |  提交时间:2019/05/12
Synthesis, structure of a new acceptor TBA(2)S(6) and preparation, physical properties of ET3S6 期刊论文
SYNTHETIC METALS, 1999, 卷号: 105, 期号: 3, 页码: 155-159
作者:  Zhang, QC;  Wu, PJ;  Chen, SY;  Ding, RS;  Wang, YQ
收藏  |  浏览/下载:52/0  |  提交时间:2019/04/09
A quasi-layer structure of trinuclear molybdenum(IV) cluster, Mo3S7(S2CNEt2)(3) I center dot S-8 期刊论文
http://dx.doi.org/10.1023/A:1009572717043, 1999
Lu, C. Z.; Zhuang, J. N.; Chi, L. S.; Wang, Y. G.; Huang, J. S.; Zhuang, H. H.; Zhang, Q. E.; 张乾二
收藏  |  浏览/下载:4/0  |  提交时间:2013/12/12
Self-organization of wire-like inas nanostructures on inp 期刊论文
Journal of crystal growth, 1999, 卷号: 205, 期号: 4, 页码: 613-617
作者:  Li, HX;  Zhuang, QD;  Kong, XW;  Wang, ZG;  Daniels-Race, T
收藏  |  浏览/下载:16/0  |  提交时间:2019/05/12
Two-dimensional ordering of self-assembled inxga1-xas quantum dots grown on gaas(311)b surfaces 期刊论文
Journal of crystal growth, 1999, 卷号: 205, 期号: 4, 页码: 481-488
作者:  Xu, HZ;  Jiang, WH;  Xu, B;  Zhou, W;  Wang, ZG
收藏  |  浏览/下载:27/0  |  提交时间:2019/05/12
Fabrication of ingaas quantum dots with an underlying ingaalas layer on gaas(100) and high index substrates by molecular beam epitaxy 期刊论文
Journal of crystal growth, 1999, 卷号: 205, 期号: 4, 页码: 607-612
作者:  Jiang, WH;  Xu, HZ;  Xu, B;  Wu, J;  Ye, XL
收藏  |  浏览/下载:21/0  |  提交时间:2019/05/12
Self-assembled inas and in0.9al0.1as quantum dots on (001)inp substrates grown by molecular beam epitaxy (mbe) 期刊论文
Journal of crystal growth, 1999, 卷号: 204, 期号: 1-2, 页码: 24-28
作者:  Sun, ZZ;  Liu, FQ;  Ding, D;  Xu, B;  Wang, ZG
收藏  |  浏览/下载:17/0  |  提交时间:2019/05/12


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