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| Semiconductor laser device and manufacturing process 专利 专利号: JP1991049284A, 申请日期: 1991-03-04, 公开日期: 1991-03-04 作者: TADA KUNIO; NAKANO YOSHIAKI; RA TAKESHI; INOUE TAKESHI
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:9/0  |  提交时间:2019/12/31 |
| Superlattice structure semiconductor device 专利 专利号: JP1991020096A, 申请日期: 1991-01-29, 公开日期: 1991-01-29 作者: MITSUYU TSUNEO; OKAWA KAZUHIRO; KARASAWA TAKESHI
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| ELEMENT REDISTRIBUTION AND EMBRITTLEMENT OF AMORPHOUS NI-P DURING STRUCTURAL RELAXATION 期刊论文 Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing, 1991, 卷号: 134, 页码: 955-958 Z. Qu; T. S. Xie
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| CHARACTERIZATION OF THE SIC AND TIN WHISKER MICROSTRUCTURE 期刊论文 Journal of Materials Science, 1991, 卷号: 26, 期号: 12, 页码: 3202-3208 J. Zhu; X. G. Ning; H. G. Xu; K. Y. Hu; W. Cao; H. Q. Ye
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| STRUCTURAL STABILITY AND ELECTRONIC DENSITY OF STATES IN (001)-ORIENTED AND (111)-ORIENTED (GAP)1 (INP)1 STRAINED-LAYER SUPERLATTICES 期刊论文 Journal of Physics-Condensed Matter, 1991, 卷号: 3, 期号: 36, 页码: 6977-6987 E. G. Wang; J. Zi; D. S. Wang
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| 机器视觉检测滚子表面缺陷 Applying machine vision technique to inspect surface defects of rollers 期刊论文 1991, 页码: 39-43 作者: 先武[1]; 张裕[2]; 李利平[3]
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| 纯金属Ni在激光熔凝处理后的缺陷 Defects of laser remelting on pure metal Ni surface 期刊论文 1991, 卷号: 12, 页码: 303-306 作者: 刘江龙[1]; 殷一贤[1]
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| PROTON-IMPLANTED NEW TYPE SILICON MATERIAL SUBJECTED TO 2-STEP FURNACE ANNEALING 期刊论文 nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 1991, 卷号: 59, 期号: 0, 页码: 1053-1055 LI JM
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:16/0  |  提交时间:2010/11/15
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