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	Superlattice structure semiconductor device
	MITSUYU TSUNEO; OKAWA KAZUHIRO; KARASAWA TAKESHI
	1991-01-29
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1991020096A
国家	日本
文献子类	发明申请
其他题名	Superlattice structure semiconductor device
英文摘要	PURPOSE:To acquire good electrical and optical performance by providing a superlattice layer which is formed by laminating a plurality of thin zinc sulfide layers and thin zinc telluride layers on a buffer layer alternatively. CONSTITUTION:A device is composed of an indium phosphate single crystalline substrate 1, a superlattice layer 2 which is formed by laminating a plurality of zinc sulfide layers 2a and zinc telluride layers 2b, and a buffer layer which is formed by making epitaxial growth of cadmium sulfide. In this case, a lattice constant of cadmium sulfide approximately coincides with that of indium phosphorus or a substrate, which enables good epitaxial growth. The cadmium sulfide buffer layer 3 also shows a tendency of three dimensional island-shape growth immediately after beginning of growth; however, after a growth of several tens of Angstrom or more, it shifts to a two dimensional growth and a flat surface can be acquired at an atomic level. As a result, the superlattice layer 2 which has a grown on the buffer layer 3 grows two-dimensionally just after beginning of growth and a good and flat superlattice without defects can be acquired. Good electrical and optical characteristics can be realized in this way.
公开日期	1991-01-29
申请日期	1989-06-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/77460]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	MITSUYU TSUNEO,OKAWA KAZUHIRO,KARASAWA TAKESHI. Superlattice structure semiconductor device. JP1991020096A. 1991-01-29.

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