CORC

在结果中检索

CORC

浏览/检索结果: 共8条，第1-8条 帮助

已选(0)清除 条数/页：   排序方式：
Modelling and application of a new method to measure the non-thermal electron current in the edge of magnetically confined plasma 期刊论文
NUCLEAR FUSION, 2021, 卷号: 61
作者:  Liu, S. C.;  Liang, Y.;  Zhang, H. X.;  Yan, N.;  Liao, L.
收藏  |  浏览/下载：71/0  |  提交时间：2021/11/15
Thermal and nonthermal melting of III-V compound semiconductors 期刊论文
PHYSICAL REVIEW B, 2019, 卷号: 99
作者:  Medvedev, Nikita;  Fang, Zhaoji;  Xia, Chenyi;  Li, Zheng
收藏  |  浏览/下载：9/0  |  提交时间：2019/12/30
Wear mechanism transition dominated by subsurface recrystallization structure in Cu-Al alloys 期刊论文
Wear, 2014, 卷号: 320, 页码: 41-50
X. Chen; Z. Han; K. Lu
收藏  |  浏览/下载：18/0  |  提交时间：2015/01/14
Correlation between wear resistance and subsurface recrystallization structure in copper 期刊论文
Wear, 2012, 卷号: 294, 页码: 438-445
B. Yao; Z. Han; K. Lu
收藏  |  浏览/下载：19/0  |  提交时间：2013/02/05
Reactive Oxygen Species in a Non-thermal Plasma Microjet and Water System: Generation, Conversion, and Contributions to Bacteria Inactivation-An Analysis by Electron Spin Resonance Spectroscopy 期刊论文
plasma processes and polymers, 2012
Wu, Haiyan; Sun, Peng; Feng, Hongqing; Zhou, Haixia; Wang, Ruexue; Liang, Yongdong; Lu, Jingfen; Zhu, Weidong; Zhang, Jue; Fang, Jing
收藏  |  浏览/下载：2/0  |  提交时间：2015/11/10
原位透射电镜电子束辐照诱导碳纳米管结构不稳定性研究 学位论文
2012, 2012
李论雄
收藏  |  浏览/下载：4/0  |  提交时间：2016/02/14
Simulation of hot dense plasma's ionic population: beyond the average atom model 期刊论文
2010, 2010
Wang, MS; Liu, LT; Han, XY; Li, JM
收藏  |  浏览/下载：1/0
The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
He C.-F.; Qin L.; Li J.; Cheng L.-W.; Liang X.-M.; Ning Y.-Q.; Wang L.-J.
收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25
The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser  and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power  the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime  so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells  and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger  the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs  This three QWs structure can add the quantum state of QW  increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.  

©版权所有 ©2017 CSpace - Powered by CSpace