QQ客服 官方微博 反馈留言

	Thermal and nonthermal melting of III-V compound semiconductors
	Medvedev, Nikita; Fang, Zhaoji; Xia, Chenyi; Li, Zheng
刊名	PHYSICAL REVIEW B
	2019
卷号	99
关键词	Aluminum arsenide Antimony compounds Electrons Free electron lasers Gallium arsenide Gallium phosphide Melting Semiconducting gallium arsenide Born-Oppenheimer approximation Disordered state Electronic excitation High density liquids Non thermal effect Non-Born Oppenheimer Thermal phase transition Tight binding methods III-V semiconductors
ISSN号	2469-9950
DOI	10.1103/PhysRevB.99.144101
URL标识	查看原文
收录类别	SCIE ; EI
WOS记录号	WOS:000464717300004
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5920038
专题	北京航空航天大学
推荐引用方式 GB/T 7714	Medvedev, Nikita,Fang, Zhaoji,Xia, Chenyi,et al. Thermal and nonthermal melting of III-V compound semiconductors[J]. PHYSICAL REVIEW B,2019,99.
APA	Medvedev, Nikita,Fang, Zhaoji,Xia, Chenyi,&Li, Zheng.(2019).Thermal and nonthermal melting of III-V compound semiconductors.PHYSICAL REVIEW B,99.
MLA	Medvedev, Nikita,et al."Thermal and nonthermal melting of III-V compound semiconductors".PHYSICAL REVIEW B 99(2019).

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。