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Improving performance of semipolar (202¯1) light emitting diodes through reduction of threading dislocations by AlGaN/GaN superlattice interlayer 期刊论文
Journal of Crystal Growth, 2020, 卷号: 536
作者:  Song, Jie;  Choi, Joowon;  Han, Jung
收藏  |  浏览/下载：52/0  |  提交时间：2020/03/12
Effect of nanohole size on selective area growth of InAs nanowire arrays on Si substrates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2017
Wang, Xiaoye; Yang, Wenyuan; Wang, Baojun; Ji, Xianghai; Xu, Shengyong; Wang, Wei; Chen, Qing; Yang, Tao
收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03
Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC 期刊论文
CHINESE PHYSICS B, 2016, 卷号: 25, 期号: 5
作者:  Liang, Feng;  Chen, Ping;  Zhao, De-Gang;  Jiang, De-Sheng;  Zhao, Zhi-Juan
收藏  |  浏览/下载：34/0  |  提交时间：2017/01/23
Species transport and chemical reaction in a MOCVD reactor and their influence on the GaN growth uniformity 期刊论文
Journal of Crystal Growth, 2016, 卷号: 454, 页码: 87-95
作者:  Zhang, Zhi;  Fang, Haisheng*;  Yao, Qingxia;  Yan, Han;  Gan, Zhiyin
收藏  |  浏览/下载：16/0  |  提交时间：2019/12/04
Properties of AlN film grown on Si (111) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2016, 卷号: 435
作者:  Dai, Yiquan;  Li, Shuiming;  Sun, Qian;  Peng, Qing;  Gui, Chengqun
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/05
Structural and optical properties of anatase TiO2 heteroepitaxial films prepared by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2016, 卷号: 453, 页码: 106-110
作者:  Zhao, Wei;  Feng, Xianjin;  Xiao, Hongdi;  Luan, Caina;  Ma, Jin
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17
A novel MOCVD reactor for growth of high-quality GaN-related LED layers 期刊论文
Journal of Crystal Growth, 2015, 卷号: 415, 页码: 72-77
作者:  Hu, Shaolin;  Liu, Sheng;  Zhang, Zhi;  Yan, Han;  Gan, Zhiyin*
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/04
Structural, optical and electrical properties of ternary Al2xIn2-2xO3 films prepared by MOCVD 期刊论文
Journal of Crystal Growth, 2015, 卷号: 422, 页码: 24-28
作者:  Feng, Xianjin;  Zhao, Cansong;  Li, Zhao;  Ma, Jin
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17
Structural, optical and electrical properties of ternary Al2xIn2-2xO3 films prepared by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2015, 卷号: 422, 页码: 24-28
作者:  Feng, Xianjin;  Zhao, Cansong;  Li, Zhao;  Ma, Jin
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/17
Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition 期刊论文
THIN SOLID FILMS, 2014, 卷号: 564, 期号: 0, 页码: 135-139
作者:  Yang H(杨辉)
收藏  |  浏览/下载：18/0  |  提交时间：2014/12/02

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