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浏览/检索结果: 共3条，第1-3条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Interface properties and bias temperature instability with ternary H-Cl-N mixed plasma post-oxidation annealing in 4H-SiC MOS capacitors 期刊论文 APPLIED SURFACE SCIENCE, 2019, 卷号: 488, 页码: 293-302 作者:  Yang, Chao;  Zhang, Fanglong;  Yin, Zhipeng;  Su, Yan;  Qin, Fuwen 收藏  |  浏览/下载：11/0  |  提交时间：2019/12/02 4H-SiC  MOS capacitor  Interface properties  Bias temperature instability  Electron cyclotron resonance  Post-oxidation annealing   Electrical and physical properties of 4H-SiC MOS interface with electron cyclotron resonance microwave nitrogen plasma post-oxidation annealing 期刊论文 PHYSICA B-CONDENSED MATTER, 2014, 卷号: 432, 页码: 89-95 作者:  Zhu, Qiaozhi;  Qin, Fuwen;  Li, Wenbo;  Wang, Dejun 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/09 SiC  SiO2/SiC interface  Electron cyclotron resonance microwave  nitrogen plasma post-oxidation annealing  Density of interface traps  Secondary ion mass spectrometry  X-ray photoelectron spectroscopy   Preparation of preferentially (200) oriented CeO/sub 2/ coatings on (1102) sapphire substrate by chemical solution deposition 期刊论文 2010, 2010 Xue Yao-hui; Deng Chang-sheng; Li Qing-feng; Ai De-sheng; Dai Xia-ming 收藏  |  浏览/下载：4/0