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	Interface properties and bias temperature instability with ternary H-Cl-N mixed plasma post-oxidation annealing in 4H-SiC MOS capacitors
	Yang, Chao; Zhang, Fanglong; Yin, Zhipeng; Su, Yan; Qin, Fuwen; Wang, Dejun
刊名	APPLIED SURFACE SCIENCE
	2019
卷号	488页码:293-302
关键词	4H-SiC MOS capacitor Interface properties Bias temperature instability Electron cyclotron resonance Post-oxidation annealing
ISSN号	0169-4332
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3216458
专题	大连理工大学
作者单位	1.Dalian Univ Technol, Fac Elect Informat & Elect Engn, Sch Control Sci & Engn, Liaoning Integrated Circuit Technol Key Lab, Dalian 116024, Peoples R China. 2.Dalian Univ Technol, Minist Educ, State Key Lab Mat Modificat Laser Ion & Electron, Dalian 116024, Peoples R China.
推荐引用方式 GB/T 7714	Yang, Chao,Zhang, Fanglong,Yin, Zhipeng,et al. Interface properties and bias temperature instability with ternary H-Cl-N mixed plasma post-oxidation annealing in 4H-SiC MOS capacitors[J]. APPLIED SURFACE SCIENCE,2019,488:293-302.
APA	Yang, Chao,Zhang, Fanglong,Yin, Zhipeng,Su, Yan,Qin, Fuwen,&Wang, Dejun.(2019).Interface properties and bias temperature instability with ternary H-Cl-N mixed plasma post-oxidation annealing in 4H-SiC MOS capacitors.APPLIED SURFACE SCIENCE,488,293-302.
MLA	Yang, Chao,et al."Interface properties and bias temperature instability with ternary H-Cl-N mixed plasma post-oxidation annealing in 4H-SiC MOS capacitors".APPLIED SURFACE SCIENCE 488(2019):293-302.

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