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科研机构
清华大学 [4]
华南理工大学 [4]
湖南大学 [4]
大连理工大学 [1]
内容类型
期刊论文 [9]
会议 [2]
会议论文 [2]
发表日期
2019 [2]
2018 [2]
2017 [1]
2016 [1]
2010 [4]
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浏览/检索结果:
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Short-Circuit Ruggedness and Failure Mechanisms of Si/SiC Hybrid Switch
期刊论文
IEEE Transactions on Power Electronics, 2019, 卷号: Vol.34 No.3, 页码: 2771-2780
作者:
Jun Wang
;
Xi Jiang
;
Zongjian Li
;
Z. John Shen
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2019/12/13
MOSFET
Silicon carbide
Logic gates
Insulated gate bipolar transistors
Switches
Leakage currents
Silicon
Failure analysis
gate control
hybrid switch (HyS)
IGBT
short-circuit (SC)
Silicon Carbide (SiC) $\scriptscriptstyle{\text{MOSFET}}$
Gate Control Optimization of Si/SiC Hybrid Switch for Junction Temperature Balance and Power Loss Reduction
期刊论文
IEEE Transactions on Power Electronics, 2019, 卷号: Vol.34 No.2, 页码: 1744-1754
作者:
Jun Wang
;
Zongjian Li
;
Xi Jiang
;
Cheng Zeng
;
Z. John Shen
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/12/13
Switches
Insulated
gate
bipolar
transistors
Silicon
carbide
MOSFET
Logic
gates
Silicon
Gate
control
hybrid
switch
IGBT
junction
temperature
mosfet
power
loss
SiC
Research on even Flow of IGBT Modules for DC Micro-Grid Hybrid Circuit Breakers
会议论文
28th International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV 2018, Greifswald, Germany, 2018-09-23
作者:
Wang, Dequan
;
Liao, Minfu
;
Leng, Tong
;
Duan, Xiongying
;
Zou, Jiyan
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/12/02
Electric circuit breakers
Electric commutation
Electric connectors
Timing circuits, Arc current
Breaking capacity
DC MHCB
Hybrid circuit breaker
Impedance method
Operating principles
Parallel connections
Parallel currents, Insulated gate bipolar transistors (IGBT)
Gate Control Optimization of Si/SiC Hybrid Switch for Junction Temperature Balance and Power Loss Reduction
期刊论文
IEEE Transactions on Power Electronics, 2018, 页码: 1
作者:
Jun Wang
;
Zongjian Li
;
Xi Jiang
;
Cheng Zeng
;
John Shen GAE
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/12/26
Switches
Insulated
gate
bipolar
transistors
Silicon
carbide
MOSFET
Logic
gates
Silicon
Hybrid
switch
SiC
MOSFET
IGBT
gate
control
power
loss
junction
temperature
Experimental Investigation on the Effects of Narrow Junction Temperature Cycles on Die-Attach Solder Layer in an IGBT Module (EI收录)
期刊论文
IEEE Transactions on Power Electronics, 2017, 卷号: 32, 页码: 1431-1441
作者:
Lai, Wei[1]
;
Chen, Minyou[1]
;
Ran, Li[2]
;
Xu, Shengyou[1]
;
Jiang, Nan[1]
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/04/24
Insulated gate bipolar transistors (IGBT)
Outages
Reliability
Stress concentration
Simulation Study of an Insulated Gate Bipolar Transistor With Pinched-Off N-Type Pillar
期刊论文
IEEE Journal of the Electron Devices Society, 2016, 卷号: Vol.4 No.3, 页码: 144-148
作者:
Jiang, MX
;
Shen, ZJ
;
Wang, J
;
Shuai, ZK
;
Yin, X
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2019/12/31
Insulated gate bipolar transistors
Reliability
Electric fields
Silicon
Breakdown voltage
Reliability
Avalanche Energy
Breakdown Voltage
Forward Voltage Drop
IGBT
Research on a IGBT drive circuit based on 2ED300C17-S
期刊论文
2010, 2010
An Hua
;
Wang Li
;
Zhang Hua
;
Du Dong
收藏
  |  
浏览/下载:7/0
Drive circuit for RB-IGBT and its application in matrix converter
期刊论文
2010, 2010
Zhou Daning
;
Sun Kai
;
Kong Pengju
;
Huang Lipei
收藏
  |  
浏览/下载:9/0
New 6 kV drive based on hybrid 7-level voltage sourced inverter
期刊论文
2010, 2010
Liu Wen-hua
;
Chen Yuan-hua
;
Song Qiang
;
Li Jian-guo
收藏
  |  
浏览/下载:4/0
A novel 2-step commutation method in RB-IGBT based matrix converter drive system
期刊论文
2010, 2010
Zhou Da-ning
;
Liu Ya-dong
;
Huang Li-pei
收藏
  |  
浏览/下载:7/0
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