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Bias dependence of total ionizing dose effects in 22 nm bulk nFinFETs
期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 177, 期号: 3-4, 页码: 372-382
作者:
Cui, X (Cui, Xu) [1] , [2] , [3]
;
Cui, JW (Cui, Jiang-Wei) [1] , [2] , [3]
;
Zheng, QW (Zheng, Qi-Wen) [1] , [2] , [3]
;
Wei, Y (Wei, Ying) [1] , [2] , [3]
;
Li, YD (Li, Yu-Dong) [1] , [2] , [3]
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2022/06/21
FinFET
1/f noise
TlD
CVS
bias dependence
Single event transient effect of frontside and backside illumination image sensors under proton irradiation
期刊论文
ACTA PHYSICA SINICA, 2022, 卷号: 71, 期号: 5, 页码: 1-9
作者:
Fu, J (Fu Jing) [1] , [2] , [3]
;
Cai, YL (Cai Yu-Long) [4]
;
Li, YD (Li Yu-Dong) [1] , [2]
;
Feng, J (Feng Jie) [1] , [2]
;
Wen, L (Wen Lin) [1] , [2]
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2022/06/06
CMOS image sensor
proton irradiation
single event effect
transientbrightspot
Calibration of the air shower energy scale of the water and air Cherenkov techniques in the LHAASO experiment
期刊论文
PHYSICAL REVIEW D, 2021, 卷号: 104, 期号: 6
作者:
Aharonian, F.
;
An, Q.
;
Axikegu
;
Bai, L. X.
;
Bai, Y. X.
收藏
  |  
浏览/下载:120/0
  |  
提交时间:2021/10/08
Ultrahigh-energy photons up to 1.4 petaelectronvolts from 12 γ-ray Galactic sources
期刊论文
Nature, 2021, 卷号: 594, 期号: 7861, 页码: 33-36
作者:
Cao, Zhen
;
Aharonian, F. A.
;
An, Q.
;
Axikegu
;
Bai, L. X.
收藏
  |  
浏览/下载:157/0
  |  
提交时间:2021/07/17
Dual self-healing composite coating on magnesium alloys for corrosion protection
期刊论文
Chemical Engineering Journal, 2021, 期号: 424, 页码: 1-12
作者:
Siqin Liu 1,3
;
Zhaoxia Li 2
;
Qiangliang Yu 1,3
;
Yuming Qi 1,3
;
Zhenjin Peng 1
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2021/12/13
Mechanism of Ionization Damage in Large Eight-Transistor Complementary Metal-Oxide-Semiconductor Color Image Sensors
期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 11, 页码: 1755-1761
作者:
Feng, J (Feng, Jie) [1] , [2]
;
Fu, J (Fu, Jing) [1] , [2] , [3]
;
Li, YD (Li, Yu-Dong) [1] , [2]
;
Wen, L (Wen, Lin) [1] , [2]
;
Guo, Q (Guo, Qi) [1] , [2]
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2022/03/24
CMOS Color Image Sensor
Ionization Damage
Radiation-Sensitive Parameters
Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429
作者:
Zheng, QW (Zheng, Qiwen) 1
;
Cui, JW (Cui, Jiangwei) 1
;
Yu, XF (Yu, Xuefeng) 1
;
Li, YD (Li, Yudong) 1
;
Lu, W (Lu, Wu) 1
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2021/08/06
Radiation-hardened (RH)silicon-on-insulator (SOI)total ionizing dose (TID)within-wafer variability
Influence of enhanced low dose rate sensitivity on single-event transient degradation in the LM158 bipolar operational amplifier
期刊论文
AIP ADVANCES, 2021, 卷号: 11, 期号: 5, 页码: 1-6
作者:
Xiang, CAF (Xiang, Chuanfeng) 1 , 2
;
Yao, S (Yao, Shuai) 1 , 3
;
Lu, W (Lu, Wu) 1 , 2
;
Li, XL (Li, Xiaolong) 1
;
Yu, X (Yu, Xin) 1
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2021/08/06
Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 10, 页码: 2516-2523
作者:
Zheng, QW (Zheng, Qiwen) 1Cui, JW (Cui, Jiangwei) 1Yu, XF (Yu, Xuefeng) 1
;
Li, YD (Li, Yudong) 1
;
Lu, W (Lu, Wu) 1
;
He, CF (He, Chengfa) 1
;
Guo, Q (Guo, Qi) 1
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2021/12/06
Threshold voltage
TestingMOSFET circuits
Transistors
Standards
Logic gates
Fluctuations
Buried oxide (BOX)
silicon-on-insulator (SOI)
total ionizing dose (TID)
Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs
期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429
作者:
Feng, HN (Feng, Haonan) [1] , [2] , [3]
;
Yang, S (Yang, Sheng) [1] , [2] , [3]
;
Liang, XW (Liang, Xiaowen) [1] , [2] , [3]
;
Zhang, D (Zhang, Dan) [1] , [2] , [3]
;
Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3]
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2022/03/24
SiC Power MOSFETs
Switching Characteristics
Total Ionizing Dose (TID) Effect
Static Characteristic
Parasitic Capacitance
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