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科研机构
半导体研究所 [9]
西安交通大学 [5]
重庆大学 [1]
复旦大学上海医学院 [1]
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期刊论文 [13]
会议论文 [3]
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2018 [1]
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浏览/检索结果:
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Pooled analysis of WHO Surgical Safety Checklist use and mortality after emergency laparotomy
期刊论文
BRITISH JOURNAL OF SURGERY, 2019, 卷号: 106, 期号: 2
作者:
Thomas, Hannah S.
;
Weiser, Thomas G.
;
Drake, Thomas M.
;
Knight, Stephen R.
;
Fairfield, Cameron
收藏
  |  
浏览/下载:138/0
  |  
提交时间:2019/12/05
Design of Full GaN Power Integrated DC-DC Converter with Over-current Protection
会议论文
作者:
Sun, Ruize
;
Liang, Yung C.
;
Yeo, Yee-Chia
;
Zhao, Cezhou
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2019/11/26
over-current protection
GaN power integrated circuit
Design of power integrated circuits in full AlGaN/GaN MIS-HEMT configuration for power conversion
期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017, 卷号: 214
作者:
Sun, Ruize
;
Liang, Yung C.
;
Yeo, Yee-Chia
;
Wang, Yun-Hsiang
;
Zhao, Cezhou
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/11/26
high electron mobility transistors
GaN
buck converters
metal-insulator-semiconductor structures
AlGaN
Au-Free AlGaN/GaN MIS-HEMTs With Embedded Current Sensing Structure for Power Switching Applications
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 页码: 3515-3518
作者:
Sun, Ruize
;
Liang, Yung C.
;
Yeo, Yee-Chia
;
Zhao, Cezhou
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/11/26
high-temperature operation
AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT)
power converter control
embedded current sensor
Realistic Trap Configuration Scheme With Fabrication Processes in Consideration for the Simulations of AlGaN/GaN MIS-HEMT Devices
会议论文
作者:
Sun, Ruize
;
Liang, Yung C.
;
Yeo, Yee-Chia
;
Wang, Yun-Hsiang
;
Zhao, Cezhou
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/02
GaN HEMT simulations
AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistor (MIS-HEMT)
interfacial traps
Design of DC-DC Buck Converter with Integrated Over-current Protect ion based on Power AlGaN/GaN MIS-HEMT Configuration
会议论文
作者:
Sun, Ruize
;
Liang, Yung C.
;
Yeo, Yee-Chia
;
Wang, Yun-Hsiang
;
Zhao, Cezhou
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2019/11/26
Germanium-Tin P-Channel Tunneling Field-Effect Transistor: Device Design and Technology Demonstration
期刊论文
2013, 卷号: 60, 页码: 4048-4056
作者:
Yang, Yue[1]
;
Han, Genquan[2]
;
Guo, Pengfei[1]
;
Wang, Wei[1]
;
Gong, Xiao[1]
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/11/30
Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS
期刊论文
ieee transactions on electron devices, 2013, 卷号: 60, 期号: 5, 页码: 1640-1648
Gong, Xiao
;
Han, Genquan
;
Liu, Bin
;
Wang, Lanxiang
;
Wang, Wei
;
Yang, Yue
;
Kong, Eugene Yu-Jin
;
Su, Shaojian
;
Xue, Chunlai)
;
Cheng, Buwen
;
Yeo, Yee-Chia
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2013/08/27
Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
期刊论文
solid-state electronics, 2013, 卷号: 83, 页码: 66-70
Wang, Lanxiang
;
Su, Shaojian
;
Wang, Wei
;
Gong, Xiao
;
Yang, Yue
;
Guo, Pengfei
;
Zhang, Guangze
;
Xue, Chunlai
;
Cheng, Buwen
;
Han, Genquan
;
Yeo, Yee-Chia
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2013/08/27
Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
期刊论文
Solid-State Electronics, 2013, 卷号: 83, 页码: 66–70
Lanxiang Wang, Shaojian Su, Wei Wang, Xiao Gong, Yue Yang, Pengfei Guo, Guangze Zhang, Chunlai Xue, Buwen Cheng, Genquan Han, Yee-Chia Yeo
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2014/04/04
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