Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation

	Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
	Wang, Lanxiang ; Su, Shaojian ; Wang, Wei ; Gong, Xiao ; Yang, Yue ; Guo, Pengfei ; Zhang, Guangze ; Xue, Chunlai ; Cheng, Buwen ; Han, Genquan ; Yeo, Yee-Chia
刊名	solid-state electronics
	2013
卷号	83 页码:66-70
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2013-08-27
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24288]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Wang, Lanxiang,Su, Shaojian,Wang, Wei,et al. Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation[J]. solid-state electronics,2013,83:66-70.
APA	Wang, Lanxiang.,Su, Shaojian.,Wang, Wei.,Gong, Xiao.,Yang, Yue.,...&Yeo, Yee-Chia.(2013).Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation.solid-state electronics,83,66-70.
MLA	Wang, Lanxiang,et al."Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation".solid-state electronics 83(2013):66-70.