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浏览/检索结果: 共6条，第1-6条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Characterization of Transient Threshold Voltage Shifts in Enhancement-and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs 会议论文 作者:  Cui, Miao;  Cai, Yutao;  Lam, Sang;  Liu, Wen;  Zhao, Chun 收藏  |  浏览/下载：5/0  |  提交时间：2019/11/26 AlGaN/GaN MIS-HEMTs  Frequency dependence  Frequency independent  High-voltage switching  Metal-insulator-semiconductors  MIS-HEMT  Threshold voltage shifts  Voltage hysteresis   Effects of Biased Irradiation on Charge Trapping in HfO2 Dielectric Thin Films 会议论文 作者:  Mu, Yifei;  Zhao, Ce Zhou;  Lu, Qifeng;  Zhao, Chun;  Qi, Yanfei 收藏  |  浏览/下载：4/0  |  提交时间：2019/11/26 HfO2  Thin Films  Charge Trapping   Total Dose Effects and Bias Instabilities of (NH4)(2)S Passivated Ge MOS Capacitors With HfxZr1-xOy Thin Films 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 卷号: 64, 页码: 2913-2921 作者:  Mu, Yifei;  Fang, Yuxiao;  Zhao, Ce Zhou;  Zhao, Chun;  Lu, Qifeng 收藏  |  浏览/下载：3/0  |  提交时间：2019/11/26 germanium  HfxZr1-xOy  interface traps  total dose effect  oxide trapped charges   Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 卷号: 64, 页码: 673-682 作者:  Mu, Yifei;  Zhao, Ce Zhou;  Lu, Qifeng;  Zhao, Chun;  Qi, Yanfei 收藏  |  浏览/下载：4/0  |  提交时间：2019/11/26 gamma irradiation  ALD  hafnium oxide  low-dose-rate  oxide trapped charges  pulse CV   Real-time and on-site gamma-ray radiation response testing system for semiconductor devices and its applications 期刊论文 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2016, 卷号: 372, 期号: [db:dc_citation_issue], 页码: 14-28 作者:  Mu, Yifei;  Zhao, Ce Zhou;  Qi, Yanfei;  Lam, Sang;  Zhao, Chun 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/02 Real-time I-V/C-V test  High-kappa dielectrics  Total-dose induced defects  HfO2  On-site radiation response   Electrical Properties and Interfacial Studies of HfxTi1-xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates 期刊论文 MATERIALS, 2015, 卷号: 8, 期号: [db:dc_citation_issue], 页码: 8169-8182 作者:  Lu, Qifeng;  Mu, Yifei;  Roberts, Joseph W.;  Althobaiti, Mohammed;  Dhanak, Vinod R. 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/02 XPS  Ge substrate  AFM  titanium-doped hafnium oxide  XRD