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浏览/检索结果: 共8条，第1-8条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Pooled analysis of WHO Surgical Safety Checklist use and mortality after emergency laparotomy 期刊论文 BRITISH JOURNAL OF SURGERY, 2019, 卷号: 106, 期号: 2 作者:  Thomas, Hannah S.;  Weiser, Thomas G.;  Drake, Thomas M.;  Knight, Stephen R.;  Fairfield, Cameron 收藏  |  浏览/下载：138/0  |  提交时间：2019/12/05 High-Performance Pentacene Organic Thin-Film Transistor by Using Nd2O3 Gate Dielectric Doped with Nb 期刊论文 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 卷号: 215 作者:  Ma, Yuanxiao;  Tang, Wing Man;  Han, Chuanyu;  Lai, Pui To 收藏  |  浏览/下载：7/0  |  提交时间：2019/11/26 NdNbO  pentacene organic thin-film transistors  high-k   Effects of Gate Electron Concentration on the Performance of Pentacene Organic Thin-Film Transistors 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 页码: 963-966 作者:  Ma, Yuan Xiao;  Han, Chuan Yu;  Tang, Wing Man;  Lai, Pui To 收藏  |  浏览/下载：9/0  |  提交时间：2019/11/26 NdTaON  phonon scattering  Organic thin-film transistor  gate electron concentration   Influences of Remote Coulomb and Interface-Roughness Scatterings on Electron Mobility of InGaAs nMOSFET with High-k Stacked Gate Dielectric 期刊论文 IEEE Transactions on Nanotechnology, 2015, 卷号: 14, 期号: 5, 页码: 854-861 作者:  Wang, Li-Sheng*;  Xu, Jing-Ping;  Liu, Lu;  Huang, Yuan;  Lu, Han-Han 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/04 InGaAs MOSFETs  effective electron mobility  high-k dielectric  remote Coulomb scattering  remote interface-roughness scattering   Plasma-Nitrided Ga2O3(Gd2O3) as Interfacial Passivation Layer for InGaAs Metal–Oxide– Semiconductor Capacitor With HfTiON Gate Dielectric 期刊论文 IEEE Transactions on Electron Devices, 2015, 卷号: 62, 期号: 4, 页码: 1235-1240 作者:  Wang, Li-Sheng*;  Xu, Jing-Ping;  Liu, Lu;  Lu, Han-Han;  Lai, Pui-To 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/04 HfTiON gate-dielectric  InGaAs metal-oxide-semiconductor (MOS)  interface-state  nitrided Ga2O3(Gd2O3) (GGON) interlayer  plasma-nitridation   Electrical properties of HfTiON gate-dielectric GaAs metal-oxide- semiconductor capacitor with AlON as interlayer 期刊论文 IEEE Transactions on Electron Devices, 2014, 卷号: 61, 期号: 3, 页码: 742-746 作者:  Wang, Li-Sheng*;  Liu, Lu;  Xu, Jing-Ping;  Zhu, Shu-Yan;  Huang, Yuan 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/04 AlON interlayer  GaAs MOS  HfTiON gate-dielectric  interface-state   Nitrided HfTiON/Ga2O3(Gd2O3) as stacked gate dielectric for GaAs MOS applications 期刊论文 Applied Physics Express, 2014, 卷号: 7, 期号: 6, 页码: 061201- 作者:  Wang, Li-Sheng;  Xu, Jing-Ping*;  Liu, Lu;  Tang, Wing-Man;  Lai, Pui-To 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/04 Improving the performance of polymer solar cells by adjusting the crystallinity and nanoscale phase separation 期刊论文 Chinese Physics B, 2012, 卷号: Vol.21 No.7 作者:  Chen, Wei-Bing;  Xu, Zong-Xiang;  Li, Kai;  Chui, Stephen Sin-Yin;  Roy, V.A.L. 收藏  |  浏览/下载：3/0  |  提交时间：2020/01/05 crystallinity  polymer solar cell  ultrasonic irradiation  nanoscale phase separation