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	High-Performance Pentacene Organic Thin-Film Transistor by Using Nd2O3 Gate Dielectric Doped with Nb
	Ma, Yuanxiao; Tang, Wing Man; Han, Chuanyu; Lai, Pui To
刊名	PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
	2018
卷号	215
关键词	NdNbO pentacene organic thin-film transistors high-k
ISSN号	1862-6300
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2919375
专题	西安交通大学
推荐引用方式 GB/T 7714	Ma, Yuanxiao,Tang, Wing Man,Han, Chuanyu,et al. High-Performance Pentacene Organic Thin-Film Transistor by Using Nd2O3 Gate Dielectric Doped with Nb[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2018,215.
APA	Ma, Yuanxiao,Tang, Wing Man,Han, Chuanyu,&Lai, Pui To.(2018).High-Performance Pentacene Organic Thin-Film Transistor by Using Nd2O3 Gate Dielectric Doped with Nb.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,215.
MLA	Ma, Yuanxiao,et al."High-Performance Pentacene Organic Thin-Film Transistor by Using Nd2O3 Gate Dielectric Doped with Nb".PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 215(2018).

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