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| Cavity Quantum Electrodynamics with Second-Order Topological Corner State 期刊论文 LASER & PHOTONICS REVIEWS, 2020, 卷号: 14, 期号: 8, 页码: 1900425 作者: Xin Xie; Weixuan Zhang; Xiaowu He; Shiyao Wu; Jianchen Dang; Kai Peng; Feilong Song; Longlong Yang; Haiqiao Ni; Zhichuan Niu; Can Wang; Kuijuan Jin; Xiangdong Zhang; Xiulai Xu 收藏  |  浏览/下载:44/0  |  提交时间:2021/06/28 |
| Low-threshold topological nanolasers based on the second-order corner state 期刊论文 LIGHT-SCIENCE & APPLICATIONS, 2020, 卷号: 9, 期号: 1, 页码: 109 作者: Weixuan Zhang; Xin Xie; Huiming Hao; Jianchen Dang; Shan Xiao; Shushu Shi; Haiqiao Ni; Zhichuan Niu; Can Wang; Kuijuan Jin; Xiangdong Zhang ; Xiulai Xu 收藏  |  浏览/下载:23/0  |  提交时间:2021/05/26 |
| 中国转移性结直肠癌患者二线治疗的系统性 回顾及专家共识 期刊论文 癌症, 2019, 期号: 4 作者: 许剑民; 王梓贤; 王峰; 邓艳红; 巴一 收藏  |  浏览/下载:36/0  |  提交时间:2019/12/05
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| Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy 期刊论文 Chinese Physics B, 2019, 卷号: Vol.28 No.2, 页码: 028101 作者: Jing Zhang; Hongliang Lv; Haiqiao Ni; Shizheng Yang; Xiaoran Cui 收藏  |  浏览/下载:10/0  |  提交时间:2019/12/17 |
| 中国转移性结直肠癌患者二线治疗的系统性 回顾及专家共识 期刊论文 2019, 卷号: 38, 期号: 4, 页码: 145-154 作者: 王梓贤; 王峰; 邓艳红; 巴一; 张涛 收藏  |  浏览/下载:27/0  |  提交时间:2020/01/03
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| 2.1 μ m InGaSb quantum well lasers exhibiting the maximum conversion efficiency of 27.5% with digitally grown AlGaAsSb barriers and gradient layers 期刊论文 Superlattices and Microstructures, 2019, 卷号: 130, 页码: 339-345 作者: Shengwen Xie ; Chengao Yang ; ShuShan Huang ; Ye Yuan ; Yi Zhang ; Jinming Shang ; Chenyuan Cai ; Yu Zhang ; Yingqiang Xu ; Haiqiao Ni ; Zhichuan Niu 收藏  |  浏览/下载:36/0  |  提交时间:2020/07/30 |
| The study on fabrication and characterization of Al 0.2 In 0.8 Sb/InAs 0.4 Sb 0.6 heterostructures by molecular beam epitaxy 期刊论文 IEEE Access, 2019, 卷号: 7, 页码: 102710-102716 作者: Jing Zhang; Hongliang Lv; Yifeng Song; Haiqiao Ni; Zhichuan Niu; Yuming Zhang; Senior Member, IEEE 收藏  |  浏览/下载:29/0  |  提交时间:2020/07/30 |
| Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy 期刊论文 Chinese Physics B, 2019, 卷号: 28, 期号: 2, 页码: 028101 作者: Jing Zhang ; Hongliang Lv ; Haiqiao Ni ; Shizheng Yang ; Xiaoran Cui ; Zhichuan Niu ; Yimen Zhang ; Yuming Zhang 收藏  |  浏览/下载:21/0  |  提交时间:2020/07/30 |
| High-power GaSb-based microstripe broad-area lasers 期刊论文 Applied physics express, 2018, 卷号: 11, 期号: 3, 页码: 32702 作者: Zefeng Lu ; Lijie Wang ; Yu Zhang ; Shili Shu ; Sicong Tian ; Cunzhu Tong ; Guanyu Hou ; Xiaoli Chai ; Yingqiang Xu ; Haiqiao Ni ; Zhichuan Niu ; Lijun Wang 收藏  |  浏览/下载:48/0  |  提交时间:2019/11/18 |
| Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors 期刊论文 CHINESE PHYSICS B, 2018, 卷号: Vol.27 No.9 作者: Zhang, Jing; Lv, Hongliang; Ni, Haiqiao; Niu, Zhichuan; Zhang, Yuming 收藏  |  浏览/下载:4/0  |  提交时间:2019/12/26
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