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Cavity Quantum Electrodynamics with Second-Order Topological Corner State 期刊论文
LASER & PHOTONICS REVIEWS, 2020, 卷号: 14, 期号: 8, 页码: 1900425
作者:  Xin Xie;   Weixuan Zhang;   Xiaowu He;   Shiyao Wu;   Jianchen Dang;   Kai Peng;   Feilong Song;  Longlong Yang;   Haiqiao Ni;   Zhichuan Niu;   Can Wang;   Kuijuan Jin;   Xiangdong Zhang;   Xiulai Xu
收藏  |  浏览/下载:44/0  |  提交时间:2021/06/28
Low-threshold topological nanolasers based on the second-order corner state 期刊论文
LIGHT-SCIENCE & APPLICATIONS, 2020, 卷号: 9, 期号: 1, 页码: 109
作者:  Weixuan Zhang;   Xin Xie;   Huiming Hao;   Jianchen Dang;   Shan Xiao;   Shushu Shi;   Haiqiao Ni;   Zhichuan Niu;   Can Wang;   Kuijuan Jin;   Xiangdong Zhang ;   Xiulai Xu
收藏  |  浏览/下载:23/0  |  提交时间:2021/05/26
中国转移性结直肠癌患者二线治疗的系统性 回顾及专家共识 期刊论文
癌症, 2019, 期号: 4
作者:  许剑民;  王梓贤;  王峰;  邓艳红;  巴一
收藏  |  浏览/下载:36/0  |  提交时间:2019/12/05
Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy 期刊论文
Chinese Physics B, 2019, 卷号: Vol.28 No.2, 页码: 028101
作者:  Jing Zhang;  Hongliang Lv;  Haiqiao Ni;  Shizheng Yang;  Xiaoran Cui
收藏  |  浏览/下载:10/0  |  提交时间:2019/12/17
中国转移性结直肠癌患者二线治疗的系统性 回顾及专家共识 期刊论文
2019, 卷号: 38, 期号: 4, 页码: 145-154
作者:  王梓贤;  王峰;  邓艳红;  巴一;  张涛
收藏  |  浏览/下载:27/0  |  提交时间:2020/01/03
2.1 μ m InGaSb quantum well lasers exhibiting the maximum conversion efficiency of 27.5% with digitally grown AlGaAsSb barriers and gradient layers 期刊论文
Superlattices and Microstructures, 2019, 卷号: 130, 页码: 339-345
作者:  Shengwen Xie ;   Chengao Yang ;   ShuShan Huang ;   Ye Yuan ;   Yi Zhang ;   Jinming Shang ;   Chenyuan Cai ;   Yu Zhang ;   Yingqiang Xu ;   Haiqiao Ni ;   Zhichuan Niu
收藏  |  浏览/下载:36/0  |  提交时间:2020/07/30
The study on fabrication and characterization of Al 0.2 In 0.8 Sb/InAs 0.4 Sb 0.6 heterostructures by molecular beam epitaxy 期刊论文
IEEE Access, 2019, 卷号: 7, 页码: 102710-102716
作者:  Jing Zhang;  Hongliang Lv;  Yifeng Song;  Haiqiao Ni;  Zhichuan Niu;  Yuming Zhang;   Senior Member, IEEE
收藏  |  浏览/下载:29/0  |  提交时间:2020/07/30
Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 2, 页码: 028101
作者:  Jing Zhang ;   Hongliang Lv ;   Haiqiao Ni ;   Shizheng Yang ;   Xiaoran Cui ;   Zhichuan Niu ;   Yimen Zhang ;   Yuming Zhang
收藏  |  浏览/下载:21/0  |  提交时间:2020/07/30
High-power GaSb-based microstripe broad-area lasers 期刊论文
Applied physics express, 2018, 卷号: 11, 期号: 3, 页码: 32702
作者:  Zefeng Lu ;   Lijie Wang ;   Yu Zhang ;   Shili Shu ;   Sicong Tian ;   Cunzhu Tong ;   Guanyu Hou ;   Xiaoli Chai ;   Yingqiang Xu ;   Haiqiao Ni ;   Zhichuan Niu ;   Lijun Wang
收藏  |  浏览/下载:48/0  |  提交时间:2019/11/18
Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors 期刊论文
CHINESE PHYSICS B, 2018, 卷号: Vol.27 No.9
作者:  Zhang, Jing;  Lv, Hongliang;  Ni, Haiqiao;  Niu, Zhichuan;  Zhang, Yuming
收藏  |  浏览/下载:4/0  |  提交时间:2019/12/26


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