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	Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy
	Jing Zhang; Hongliang Lv; Haiqiao Ni; Shizheng Yang; Xiaoran Cui; Zhichuan Niu; Yimen Zhang and Yuming Zhang
刊名	Chinese Physics B
	2019
卷号	Vol.28 No.2页码:028101
ISSN号	1674-1056;2058-3834
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4737119
专题	湖南大学
作者单位	1.School of Microelectronics, Xidian University and the State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xi’an 710071, China 2.State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
推荐引用方式 GB/T 7714	Jing Zhang,Hongliang Lv,Haiqiao Ni,et al. Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy[J]. Chinese Physics B,2019,Vol.28 No.2:028101.
APA	Jing Zhang.,Hongliang Lv.,Haiqiao Ni.,Shizheng Yang.,Xiaoran Cui.,...&Yimen Zhang and Yuming Zhang.(2019).Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy.Chinese Physics B,Vol.28 No.2,028101.
MLA	Jing Zhang,et al."Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy".Chinese Physics B Vol.28 No.2(2019):028101.

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