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北京大学 [51]
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半导体研究所 [2]
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期刊论文 [47]
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1/f Noise responses of Ultra-Thin Body and Buried oxide FD-SOI PMOSFETs under total ionizing dose irradiation
期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 176, 期号: 11-12, 页码: 1202-1214
作者:
Zhang, RQ (Zhang, Ruiqin) [1] , [2] , [3]
;
Zheng, QW (Zheng, Qiwen) [1] , [2]
;
Lu, W (Lu, Wu) [1] , [2]
;
Cui, JW (Cui, Jiangwei) [1] , [2]
;
Li, YD (Li, Yudong) [1] , [2]
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2022/04/07
Total ionizing dose irradiation
UTBB FD-SOI
1
f noise
Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
作者:
Zheng, QW (Zheng, Qiwen)[ 1 ]
;
Cui, JW (Cui, Jiangwei)[ 1 ]
;
Xu, LW (Xu, Liewei)[ 2 ]
;
Ning, BX (Ning, Bingxu)[ 3 ]
;
Zhao, K (Zhao, Kai)[ 3 ]
收藏
  |  
浏览/下载:99/0
  |  
提交时间:2019/05/14
Back-gate biasing
forward body bias (FBB)
total ionizing dose (TID)
ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)
The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection
期刊论文
2018
作者:
Shen, Jingyu
;
Tan, Can
;
Jiang, Rui
;
Li, Wei
;
Fan, Xue
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/12/09
One-Volt IGZO Thin-Film Transistors With Ultra-Thin, Solution-Processed AlxOy Gate Dielectric
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 期号: 3, 页码: 375-378
作者:
Cai, Wensi
;
Park, Seonghyun
;
Zhang, Jiawei
;
Wilson, Joshua
;
Li, Yunpeng
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/12/11
Indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs)
anodized
AlxOy
low operating voltage
Exploration of vertical scaling limit in carbon nanotube transistors
期刊论文
APPLIED PHYSICS LETTERS, 2016
Qiu, Chenguang
;
Zhang, Zhiyong
;
Yang, Yingjun
;
Xiao, Mengmeng
;
Ding, Li
;
Peng, Lian-Mao
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/03
FIELD-EFFECT TRANSISTORS
ATOMIC LAYER DEPOSITION
HIGH-KAPPA DIELECTRICS
GATE DIELECTRICS
HIGH-PERFORMANCE
GRAPHENE
FILMS
MOSFET
OXIDE
High-performance carbon-nanotube-based complementary field-effect-transistors and integrated circuits with yttrium oxide
期刊论文
应用物理学快报, 2014
Liang, Shibo
;
Zhang, Zhiyong
;
Si, Jia
;
Zhong, Donglai
;
Peng, Lian-Mao
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2015/11/10
GATE DIELECTRICS
THIN-FILMS
DEVICES
GROWTH
Gate leakage current of NMOSFET with ultra-thin gate oxide
期刊论文
Journal of Central South University, 2012, 卷号: Vol.19 No.11, 页码: 3105-3109
作者:
Hu, SG
;
Wu, XF
;
Xi, ZF
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2020/01/05
direct
tunneling
metal-oxide-semiconductor
field-effect
transistor
(MOSFET)
gate
oxide
Research on the gate leakage current of PMOSFET with ultra-thin gate oxide
期刊论文
Journal of Convergence Information Technology, 2012, 卷号: Vol.7 No.11, 页码: 44-51
作者:
Hu, Shigang
;
Wu, Xiaofeng
;
Xi, Zaifang
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2020/01/05
Process optimization of plasma nitridation SiON for 65 nm node gate dielectrics
期刊论文
science china information sciences, 2011
He YanDong
;
Zhang Xing
;
Wang YangYuan
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/10
plasma nitridation
post-nitridation annealing
gate leakage current
NBTI
TDDB
ULTRA-THIN
Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.54503
作者:
Jiang XW
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  |  
浏览/下载:50/2
  |  
提交时间:2011/07/05
FIELD-EFFECT TRANSISTORS
SEMICONDUCTOR-DEVICES
SILICON DEVICES
MONTE-CARLO
MOSFETS
NANOTRANSISTORS
APPROXIMATION
EQUATIONS
DESIGN
MODELS
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